Optical properties of multilayer InAs quantum dot waveguides, grown bymolecular beam epitaxy, have been studied under applied electric field. Fabry-Perotmeasurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantlyenhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorptionmeasurements at 1300 nm showed increased absorption with applied fieldaccompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Voltbias was observed at 1320 nm.
Akca, I. B., Dana, A., Aydinli, A., Rossetti, M., Li, L., Fiore, A., & Dagli, N. (2008). Electro-optic and electro-absorption characterization of InAs quantum dot waveguides. Optics Express, 16(5), 3439-3444. https://doi.org/10.1364/OE.16.003439