Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

I.B. Akca, A. Dana, A. Aydinli, M. Rossetti, L. Li, A. Fiore, N. Dagli

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)
211 Downloads (Pure)


Optical properties of multilayer InAs quantum dot waveguides, grown bymolecular beam epitaxy, have been studied under applied electric field. Fabry-Perotmeasurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantlyenhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorptionmeasurements at 1300 nm showed increased absorption with applied fieldaccompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Voltbias was observed at 1320 nm.
Original languageEnglish
Pages (from-to)3439-3444
JournalOptics Express
Issue number5
Publication statusPublished - 2008

Fingerprint Dive into the research topics of 'Electro-optic and electro-absorption characterization of InAs quantum dot waveguides'. Together they form a unique fingerprint.

Cite this