Electrically rewritable memory cells from poly(3-hexylthiophene) schottky diodes

J.H.A. Smits; S.C.J. Meskers; R.A.J. Janssen; A.W. Marsman; D.M. Leeuw, de

doi:10.1002/adma.200401534

Electrically rewritable memory cells from poly(3-hexylthiophene) schottky diodes

J.H.A. Smits, S.C.J. Meskers, R.A.J. Janssen, A.W. Marsman, D.M. Leeuw, de

Research output: Contribution to journal › Article › Academic › peer-review

78 Citations (Scopus)

Abstract

No abstract.

Original language	English
Pages (from-to)	1169-1173
Journal	Advanced Materials
Volume	17
Issue number	9
DOIs	https://doi.org/10.1002/adma.200401534
Publication status	Published - 2005

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title = "Electrically rewritable memory cells from poly(3-hexylthiophene) schottky diodes",

abstract = "No abstract.",

author = "J.H.A. Smits and S.C.J. Meskers and R.A.J. Janssen and A.W. Marsman and {Leeuw, de}, D.M.",

year = "2005",

doi = "10.1002/adma.200401534",

language = "English",

volume = "17",

pages = "1169--1173",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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AU - Smits, J.H.A.

AU - Meskers, S.C.J.

AU - Janssen, R.A.J.

AU - Marsman, A.W.

AU - Leeuw, de, D.M.

PY - 2005

Y1 - 2005

N2 - No abstract.

AB - No abstract.

U2 - 10.1002/adma.200401534

DO - 10.1002/adma.200401534

M3 - Article

SN - 0935-9648

VL - 17

SP - 1169

EP - 1173

JO - Advanced Materials

JF - Advanced Materials

IS - 9

ER -

Electrically rewritable memory cells from poly(3-hexylthiophene) schottky diodes

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