Electrical transport in as ion-implanted si in the metal-insulator transition range

Chen Gang; R.W. van der Heijden; A.T.A.M. fe Waele; H.M. Gijsman; F.P.B. Tielen

doi:10.1016/S0921-4526(90)81001-5

Electrical transport in as ion-implanted si in the metal-insulator transition range

Chen Gang
, R.W. van der Heijden
, A.T.A.M. fe Waele
, H.M. Gijsman
, F.P.B. Tielen

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.

Original language	English
Pages (from-to)	303-304
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	165-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0921-4526(90)81001-5
Publication status	Published - Aug 1990

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10.1016/S0921-4526(90)81001-5

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title = "Electrical transport in as ion-implanted si in the metal-insulator transition range",

abstract = "Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.",

author = "Chen Gang and \{van der Heijden\}, R.W. and \{fe Waele\}, A.T.A.M. and H.M. Gijsman and F.P.B. Tielen",

year = "1990",

month = aug,

doi = "10.1016/S0921-4526(90)81001-5",

language = "English",

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journal = "Physica B: Condensed Matter",

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T1 - Electrical transport in as ion-implanted si in the metal-insulator transition range

AU - Gang, Chen

AU - van der Heijden, R.W.

AU - fe Waele, A.T.A.M.

AU - Gijsman, H.M.

AU - Tielen, F.P.B.

PY - 1990/8

Y1 - 1990/8

N2 - Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.

AB - Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.

UR - https://www.scopus.com/pages/publications/0025468048

U2 - 10.1016/S0921-4526(90)81001-5

DO - 10.1016/S0921-4526(90)81001-5

M3 - Article

AN - SCOPUS:0025468048

SN - 0921-4526

VL - 165-166

SP - 303

EP - 304

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART 1

ER -

Electrical transport in as ion-implanted si in the metal-insulator transition range

Abstract

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