TY - JOUR
T1 - Electrical transport in as ion-implanted si in the metal-insulator transition range
AU - Gang, Chen
AU - van der Heijden, R.W.
AU - fe Waele, A.T.A.M.
AU - Gijsman, H.M.
AU - Tielen, F.P.B.
PY - 1990/8
Y1 - 1990/8
N2 - Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.
AB - Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0025468048&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(90)81001-5
DO - 10.1016/S0921-4526(90)81001-5
M3 - Article
AN - SCOPUS:0025468048
SN - 0921-4526
VL - 165-166
SP - 303
EP - 304
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - PART 1
ER -