Electrical transport in as ion-implanted si in the metal-insulator transition range

Chen Gang, R.W. van der Heijden, A.T.A.M. fe Waele, H.M. Gijsman, F.P.B. Tielen

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Abstract

Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.

Original languageEnglish
Pages (from-to)303-304
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume165-166
Issue numberPART 1
DOIs
Publication statusPublished - Aug 1990

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