Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

L. Date, Z. M. Rittersma, D. Massoubre, Y. Ponomarev, F. Roozeboom, D. Pique, L. Van-Autryve, S. Van Elshocht, M. Caymax

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Electrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900°C 1s activation anneal of Ph-doped 680°C-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg=1.6E-04 A/cm2 at |VFB-1| which is > 2 orders of magnitude lower than SiO2 with Poly-Si gate. A minimal degradation of leakage current after 900°C activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD HfO2 gate stack. Nevertheless, upon 1000°C activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was 2 order of magnitude higher compared to a 900°C activation anneal.

Original languageEnglish
Title of host publication2003 IEEEI/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
Subtitle of host publicationAdvancing the Science of Semiconductor Manufacturing Excellence, ASMC 2003
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages133-136
Number of pages4
ISBN (Print)0780376730
DOIs
Publication statusPublished - 26 Jun 2003
Externally publishedYes
Event14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC 2003) - Munich, Germany
Duration: 31 Mar 20031 Apr 2003
Conference number: 14

Conference

Conference14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (ASMC 2003)
Abbreviated titleASMC 2003
CountryGermany
CityMunich
Period31/03/031/04/03

Keywords

  • Annealing
  • Hafnium oxide
  • High K dielectric materials
  • High-K gate dielectrics
  • Leakage current
  • MOCVD
  • MOS capacitors
  • Temperature dependence
  • Thermal degradation
  • Thermal stability

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