Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

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Abstract

Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]
Original languageEnglish
Article number232105
JournalApplied Physics Letters
Volume100
Issue number23
DOIs
Publication statusPublished - 2012

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