Electrical isolation of AlxGa1–xAs by ion irradiation

T. Lippen, van; H. Boudinov; H.H. Tan; C. Jagadish

doi:10.1063/1.1427422

Electrical isolation of AlxGa1–xAs by ion irradiation

T. Lippen, van, H. Boudinov, H.H. Tan, C. Jagadish

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

19 Citations (Scopus)

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Abstract

The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1–xAs layers (x = 0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at 109 /sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of 600 °C is the upper limit for the n-type samples thermal stability.

Original language	English
Pages (from-to)	264-266
Journal	Applied Physics Letters
Volume	80
Issue number	2
DOIs	https://doi.org/10.1063/1.1427422
Publication status	Published - 2002

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title = "Electrical isolation of AlxGa1–xAs by ion irradiation",

abstract = "The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1–xAs layers (x = 0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at 109 /sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of 600 °C is the upper limit for the n-type samples thermal stability.",

author = "{Lippen, van}, T. and H. Boudinov and H.H. Tan and C. Jagadish",

year = "2002",

doi = "10.1063/1.1427422",

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T1 - Electrical isolation of AlxGa1–xAs by ion irradiation

AU - Lippen, van, T.

AU - Boudinov, H.

AU - Tan, H.H.

AU - Jagadish, C.

PY - 2002

Y1 - 2002

N2 - The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1–xAs layers (x = 0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at 109 /sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of 600 °C is the upper limit for the n-type samples thermal stability.

AB - The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa1–xAs layers (x = 0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at 109 /sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of 600 °C is the upper limit for the n-type samples thermal stability.

U2 - 10.1063/1.1427422

DO - 10.1063/1.1427422

M3 - Article

SN - 0003-6951

VL - 80

SP - 264

EP - 266

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Electrical isolation of AlxGa1–xAs by ion irradiation

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