Electrical characterization of hexagonal SiGe

I. Bollier; F. Balduini; Marilyne Sousa; M. Vettori; W.H.J. Peeters; E.P.A.M. Bakkers; Heinz Schmid

doi:10.1063/5.0287884

Electrical characterization of hexagonal SiGe

I. Bollier
, F. Balduini
, Marilyne Sousa
, M. Vettori
, W.H.J. Peeters
, E.P.A.M. Bakkers
, Heinz Schmid (Corresponding author)

Advanced Nanomaterials & Devices

Research output: Contribution to journal › Article › Academic › peer-review

1 Downloads (Pure)

Abstract

We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.

Original language	English
Article number	163309
Number of pages	6
Journal	Applied Physics Letters
Volume	127
Issue number	16
DOIs	https://doi.org/10.1063/5.0287884
Publication status	Published - 20 Oct 2025

Bibliographical note

Publisher Copyright:
© 2025 Author(s).

Access to Document

10.1063/5.0287884

pdfFinal published version, 2.25 MBLicence: CC BY

Cite this

@article{a0be3230927f4d8d8771e114938d3048,

title = "Electrical characterization of hexagonal SiGe",

abstract = "We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.",

author = "I. Bollier and F. Balduini and Marilyne Sousa and M. Vettori and W.H.J. Peeters and E.P.A.M. Bakkers and Heinz Schmid",

note = "Publisher Copyright: {\textcopyright} 2025 Author(s).",

year = "2025",

month = oct,

day = "20",

doi = "10.1063/5.0287884",

language = "English",

volume = "127",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Electrical characterization of hexagonal SiGe

AU - Bollier, I.

AU - Balduini, F.

AU - Sousa, Marilyne

AU - Vettori, M.

AU - Peeters, W.H.J.

AU - Bakkers, E.P.A.M.

AU - Schmid, Heinz

PY - 2025/10/20

Y1 - 2025/10/20

N2 - We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.

AB - We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.

UR - https://www.scopus.com/pages/publications/105019522188

U2 - 10.1063/5.0287884

DO - 10.1063/5.0287884

M3 - Article

AN - SCOPUS:105019522188

SN - 0003-6951

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163309

ER -

Electrical characterization of hexagonal SiGe

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this