Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm

A.K. Tripathi, K. Myny, H. Bo, K. Wezenberg, G.H. Gelinck

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Abstract

In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT integration level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm.
Original languageEnglish
Article number7323805
Pages (from-to)4063-4068
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume62
Issue number12
DOIs
Publication statusPublished - 10 Nov 2015

Keywords

  • Flexible circuits
  • flexible displays
  • indium-gallium-zinc oxide (IGZO)
  • mechanical reliability
  • adio-Frequency identification

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