Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation

W.M.M. Kessels; J.J.H. Gielis; B. Hoex; N.M. Terlinden; G. Dingemans; V. Verlaan; M.C.M. Sanden, van de

doi:10.1109/PVSC.2009.5411651

Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation

W.M.M. Kessels, J.J.H. Gielis, B. Hoex, N.M. Terlinden, G. Dingemans, V. Verlaan, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

136 Downloads (Pure)

Abstract

Recently, we have demonstrated that ultrathin («30 nm) films of Al2O3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficiency) solar cells. In this contribution, the Al2O3 passivation mechanism has been further elucidated by the contactless characterization of the c-Si/Al2O3 interface by optical second-harmonic generation (SHG). SHG has revealed effective field-effect passivation of the c-Si surface caused by a negative fixed charge density of 5×1012 cm-2 in an annealed, 11 nm thick Al2O3 film while it is on the order of 1011 cm™2 in the as-deposited film which shows negligible passivation. A comparison with SHG measurements on a 84 nm thick a-SiNx:H film treated in a conventional firing furnace has revealed the presence of a positive fixed charge density of 2×1012 cm-2 which further corroborates the SHG analysis and results.

Original language	English
Title of host publication	Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	000427-000431-
ISBN (Print)	978-1-4244-2949-3
DOIs	https://doi.org/10.1109/PVSC.2009.5411651
Publication status	Published - 2009

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Kessels, W. M. M., Gielis, J. J. H., Hoex, B., Terlinden, N. M., Dingemans, G., Verlaan, V., & Sanden, van de, M. C. M. (2009). Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation. In Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA (pp. 000427-000431-). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2009.5411651

Kessels, W.M.M. ; Gielis, J.J.H. ; Hoex, B. ; Terlinden, N.M. ; Dingemans, G. ; Verlaan, V. ; Sanden, van de, M.C.M. / Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation. Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA. Piscataway : Institute of Electrical and Electronics Engineers, 2009. pp. 000427-000431-

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abstract = "Recently, we have demonstrated that ultrathin («30 nm) films of Al2O3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficiency) solar cells. In this contribution, the Al2O3 passivation mechanism has been further elucidated by the contactless characterization of the c-Si/Al2O3 interface by optical second-harmonic generation (SHG). SHG has revealed effective field-effect passivation of the c-Si surface caused by a negative fixed charge density of 5×1012 cm-2 in an annealed, 11 nm thick Al2O3 film while it is on the order of 1011 cm{\texttrademark}2 in the as-deposited film which shows negligible passivation. A comparison with SHG measurements on a 84 nm thick a-SiNx:H film treated in a conventional firing furnace has revealed the presence of a positive fixed charge density of 2×1012 cm-2 which further corroborates the SHG analysis and results.",

author = "W.M.M. Kessels and J.J.H. Gielis and B. Hoex and N.M. Terlinden and G. Dingemans and V. Verlaan and {Sanden, van de}, M.C.M.",

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Kessels, WMM, Gielis, JJH, Hoex, B, Terlinden, NM, Dingemans, G, Verlaan, V & Sanden, van de, MCM 2009, Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation. in Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 000427-000431-. https://doi.org/10.1109/PVSC.2009.5411651

Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation. / Kessels, W.M.M.; Gielis, J.J.H.; Hoex, B.; Terlinden, N.M.; Dingemans, G.; Verlaan, V.; Sanden, van de, M.C.M.

Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. 000427-000431-.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation

AU - Kessels, W.M.M.

AU - Gielis, J.J.H.

AU - Hoex, B.

AU - Terlinden, N.M.

AU - Dingemans, G.

AU - Verlaan, V.

AU - Sanden, van de, M.C.M.

PY - 2009

Y1 - 2009

N2 - Recently, we have demonstrated that ultrathin («30 nm) films of Al2O3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficiency) solar cells. In this contribution, the Al2O3 passivation mechanism has been further elucidated by the contactless characterization of the c-Si/Al2O3 interface by optical second-harmonic generation (SHG). SHG has revealed effective field-effect passivation of the c-Si surface caused by a negative fixed charge density of 5×1012 cm-2 in an annealed, 11 nm thick Al2O3 film while it is on the order of 1011 cm™2 in the as-deposited film which shows negligible passivation. A comparison with SHG measurements on a 84 nm thick a-SiNx:H film treated in a conventional firing furnace has revealed the presence of a positive fixed charge density of 2×1012 cm-2 which further corroborates the SHG analysis and results.

AB - Recently, we have demonstrated that ultrathin («30 nm) films of Al2O3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficiency) solar cells. In this contribution, the Al2O3 passivation mechanism has been further elucidated by the contactless characterization of the c-Si/Al2O3 interface by optical second-harmonic generation (SHG). SHG has revealed effective field-effect passivation of the c-Si surface caused by a negative fixed charge density of 5×1012 cm-2 in an annealed, 11 nm thick Al2O3 film while it is on the order of 1011 cm™2 in the as-deposited film which shows negligible passivation. A comparison with SHG measurements on a 84 nm thick a-SiNx:H film treated in a conventional firing furnace has revealed the presence of a positive fixed charge density of 2×1012 cm-2 which further corroborates the SHG analysis and results.

U2 - 10.1109/PVSC.2009.5411651

DO - 10.1109/PVSC.2009.5411651

M3 - Conference contribution

SN - 978-1-4244-2949-3

SP - 000427-000431-

BT - Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Kessels WMM, Gielis JJH, Hoex B, Terlinden NM, Dingemans G, Verlaan V et al. Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation. In Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 000427-000431- https://doi.org/10.1109/PVSC.2009.5411651