Efficient Light Emission from Hexagonal SiGe

E.M.T. Fadaly; Alain Dijkstra; J.R. Suckert; D. Ziss; M.A.J. van Tilburg; Y. Ren; C. Mao; V.T. van Lange; S. Kölling; M.A. Verheijen; D. Busse; C. Rödl; J. Furthmüller; F. Bechstedt; J. Stangl; J.J. Finley; Silvana Botti; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1109/SNW51795.2021.00024

Efficient Light Emission from Hexagonal SiGe

E.M.T. Fadaly, Alain Dijkstra, J.R. Suckert, D. Ziss, M.A.J. van Tilburg, Y. Ren, C. Mao, V.T. van Lange, S. Kölling, M.A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J.J. Finley, Silvana Botti, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si_1-xGe_xalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si_1-xGe_xalloys have been fabricated and efficient light emission has been observed.

Original language	English
Title of host publication	2021 Silicon Nanoelectronics Workshop
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-4-86348-781-9
DOIs	https://doi.org/10.1109/SNW51795.2021.00024
Publication status	Published - 2021
Event	26th Silicon Nanoelectronics Workshop, SNW 2021 - Virtual, Online, Japan Duration: 13 Jun 2021 → 13 Jun 2021 Conference number: 26

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2021
Abbreviated title	SNW 2021
Country/Territory	Japan
City	Virtual, Online
Period	13/06/21 → 13/06/21

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Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., van Tilburg, M. A. J., Ren, Y., Mao, C., van Lange, V. T., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2021). Efficient Light Emission from Hexagonal SiGe. In 2021 Silicon Nanoelectronics Workshop Article 9499976 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SNW51795.2021.00024

@inproceedings{2ed6ea090a79401eb5845e68a59ff52e,

title = "Efficient Light Emission from Hexagonal SiGe",

abstract = "Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.",

author = "E.M.T. Fadaly and Alain Dijkstra and J.R. Suckert and D. Ziss and {van Tilburg}, M.A.J. and Y. Ren and C. Mao and {van Lange}, V.T. and S. K{\"o}lling and M.A. Verheijen and D. Busse and C. R{\"o}dl and J. Furthm{\"u}ller and F. Bechstedt and J. Stangl and J.J. Finley and Silvana Botti and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2021",

doi = "10.1109/SNW51795.2021.00024",

language = "English",

booktitle = "2021 Silicon Nanoelectronics Workshop",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "26th Silicon Nanoelectronics Workshop, SNW 2021, SNW 2021 ; Conference date: 13-06-2021 Through 13-06-2021",

}

Fadaly, EMT, Dijkstra, A, Suckert, JR, Ziss, D, van Tilburg, MAJ, Ren, Y, Mao, C, van Lange, VT, Kölling, S, Verheijen, MA, Busse, D, Rödl, C, Furthmüller, J, Bechstedt, F, Stangl, J, Finley, JJ, Botti, S, Haverkort, JEM & Bakkers, EPAM 2021, Efficient Light Emission from Hexagonal SiGe. in 2021 Silicon Nanoelectronics Workshop., 9499976, Institute of Electrical and Electronics Engineers, 26th Silicon Nanoelectronics Workshop, SNW 2021, Virtual, Online, Japan, 13/06/21. https://doi.org/10.1109/SNW51795.2021.00024

TY - GEN

T1 - Efficient Light Emission from Hexagonal SiGe

AU - Fadaly, E.M.T.

AU - Dijkstra, Alain

AU - Suckert, J.R.

AU - Ziss, D.

AU - van Tilburg, M.A.J.

AU - Ren, Y.

AU - Mao, C.

AU - van Lange, V.T.

AU - Kölling, S.

AU - Verheijen, M.A.

AU - Busse, D.

AU - Rödl, C.

AU - Furthmüller, J.

AU - Bechstedt, F.

AU - Stangl, J.

AU - Finley, J.J.

AU - Botti, Silvana

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

N1 - Conference code: 26

PY - 2021

Y1 - 2021

N2 - Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.

AB - Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has been observed.

UR - http://www.scopus.com/inward/record.url?scp=85124909091&partnerID=8YFLogxK

U2 - 10.1109/SNW51795.2021.00024

DO - 10.1109/SNW51795.2021.00024

M3 - Conference contribution

AN - SCOPUS:85124909091

BT - 2021 Silicon Nanoelectronics Workshop

PB - Institute of Electrical and Electronics Engineers

T2 - 26th Silicon Nanoelectronics Workshop, SNW 2021

Y2 - 13 June 2021 through 13 June 2021

ER -

Efficient Light Emission from Hexagonal SiGe

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