Efficient intraband hot carrier relaxation in the Perovskite semiconductor Cs1- xRbxSnI3 mediated by strong electron-phonon coupling

M. Monti, S.X. Tao, M. Staniforth, A. Crocker, E. Griffin, A. Wijesekara, R.A. Hatton, J. Lloyd-Hughes

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3, with x = 0 and 0.1. Energy relaxation times were found to be around 500 fs, comparable to those in the prototypical inorganic semiconductor GaAs. At low excess energies, the efficient intraband energy relaxation in the lowest conduction and valence bands of Cs1-xRbxSnI3 can be understood within the context of the Fröhlich electron-phonon interaction, with a strong coupling strength. For higher excess energies, the photoconductivity rise time lengthens in accordance with carrier injection into multiple bands, identified by quantitative first-principles bandstructure calculations and photoluminescence spectroscopy. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

Original languageEnglish
Pages (from-to)20669-20675
Number of pages7
JournalJournal of Physical Chemistry C
Volume122
Issue number36
DOIs
Publication statusPublished - 13 Sep 2018

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Hot carriers
Photoconductivity
Perovskite
Semiconductor materials
Electron-phonon interactions
Photoluminescence spectroscopy
Tin
Electrons
Iodides
Valence bands
Conduction bands
photoconductivity
Relaxation time
electrons
Thin films
energy
carrier injection
electron phonon interactions
iodides
tin

Cite this

Monti, M. ; Tao, S.X. ; Staniforth, M. ; Crocker, A. ; Griffin, E. ; Wijesekara, A. ; Hatton, R.A. ; Lloyd-Hughes, J. / Efficient intraband hot carrier relaxation in the Perovskite semiconductor Cs1- xRbxSnI3 mediated by strong electron-phonon coupling. In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 36. pp. 20669-20675.
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abstract = "The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3, with x = 0 and 0.1. Energy relaxation times were found to be around 500 fs, comparable to those in the prototypical inorganic semiconductor GaAs. At low excess energies, the efficient intraband energy relaxation in the lowest conduction and valence bands of Cs1-xRbxSnI3 can be understood within the context of the Fr{\"o}hlich electron-phonon interaction, with a strong coupling strength. For higher excess energies, the photoconductivity rise time lengthens in accordance with carrier injection into multiple bands, identified by quantitative first-principles bandstructure calculations and photoluminescence spectroscopy. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.",
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Efficient intraband hot carrier relaxation in the Perovskite semiconductor Cs1- xRbxSnI3 mediated by strong electron-phonon coupling. / Monti, M.; Tao, S.X.; Staniforth, M.; Crocker, A.; Griffin, E.; Wijesekara, A.; Hatton, R.A.; Lloyd-Hughes, J.

In: Journal of Physical Chemistry C, Vol. 122, No. 36, 13.09.2018, p. 20669-20675.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Monti, M.

AU - Tao, S.X.

AU - Staniforth, M.

AU - Crocker, A.

AU - Griffin, E.

AU - Wijesekara, A.

AU - Hatton, R.A.

AU - Lloyd-Hughes, J.

PY - 2018/9/13

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N2 - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3, with x = 0 and 0.1. Energy relaxation times were found to be around 500 fs, comparable to those in the prototypical inorganic semiconductor GaAs. At low excess energies, the efficient intraband energy relaxation in the lowest conduction and valence bands of Cs1-xRbxSnI3 can be understood within the context of the Fröhlich electron-phonon interaction, with a strong coupling strength. For higher excess energies, the photoconductivity rise time lengthens in accordance with carrier injection into multiple bands, identified by quantitative first-principles bandstructure calculations and photoluminescence spectroscopy. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

AB - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3, with x = 0 and 0.1. Energy relaxation times were found to be around 500 fs, comparable to those in the prototypical inorganic semiconductor GaAs. At low excess energies, the efficient intraband energy relaxation in the lowest conduction and valence bands of Cs1-xRbxSnI3 can be understood within the context of the Fröhlich electron-phonon interaction, with a strong coupling strength. For higher excess energies, the photoconductivity rise time lengthens in accordance with carrier injection into multiple bands, identified by quantitative first-principles bandstructure calculations and photoluminescence spectroscopy. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

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