Abstract
The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.
| Original language | English |
|---|---|
| Title of host publication | Ultrafast Phenomena and Nanophotonics XXIII |
| Editors | Markus Betz, Abdulhakem Y. Elezzabi |
| Publisher | SPIE |
| Number of pages | 8 |
| ISBN (Electronic) | 9781510624740 |
| DOIs | |
| Publication status | Published - 27 Feb 2019 |
| Event | Ultrafast Phenomena and Nanophotonics XXIII 2019 - San Francisco, United States Duration: 3 Feb 2019 → 6 Feb 2019 |
Publication series
| Name | Proceedings of SPIE |
|---|---|
| Volume | 10916 |
Conference
| Conference | Ultrafast Phenomena and Nanophotonics XXIII 2019 |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 3/02/19 → 6/02/19 |
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Keywords
- Electron phonon coupling
- Frolich
- Hot carrier relaxation
- Metal halide perovskite
- Optical pump terahertz probe
- Optoelectronics
- Photovoltaics
- metal halide perovskite
- electron phonon coupling
- photovoltaics
Cite this
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Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. / Monti, M.; Woolley, J.M.; Staniforth, M.; Wijesekara, A.; Tao, S.X.; Bandara, R.M.I.; Jayawardena, I.; Crocker, A.; Griffin, E.; Silva, S.R.P.; Hatton, R.A.; Lloyd-Hughes, J.
Ultrafast Phenomena and Nanophotonics XXIII. ed. / Markus Betz; Abdulhakem Y. Elezzabi. SPIE, 2019. 109160M (Proceedings of SPIE; Vol. 10916).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling
AU - Monti, M.
AU - Woolley, J.M.
AU - Staniforth, M.
AU - Wijesekara, A.
AU - Tao, S.X.
AU - Bandara, R.M.I.
AU - Jayawardena, I.
AU - Crocker, A.
AU - Griffin, E.
AU - Silva, S.R.P.
AU - Hatton, R.A.
AU - Lloyd-Hughes, J.
PY - 2019/2/27
Y1 - 2019/2/27
N2 - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.
AB - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.
KW - Electron phonon coupling
KW - Frolich
KW - Hot carrier relaxation
KW - Metal halide perovskite
KW - Optical pump terahertz probe
KW - Optoelectronics
KW - Photovoltaics
KW - metal halide perovskite
KW - electron phonon coupling
KW - photovoltaics
UR - http://www.scopus.com/inward/record.url?scp=85066043635&partnerID=8YFLogxK
U2 - 10.1117/12.2507268
DO - 10.1117/12.2507268
M3 - Conference contribution
AN - SCOPUS:85066043635
T3 - Proceedings of SPIE
BT - Ultrafast Phenomena and Nanophotonics XXIII
A2 - Betz, Markus
A2 - Elezzabi, Abdulhakem Y.
PB - SPIE
ER -