Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

M. Monti, J.M. Woolley, M. Staniforth, A. Wijesekara, S.X. Tao, R.M.I. Bandara, I. Jayawardena, A. Crocker, E. Griffin, S.R.P. Silva, R.A. Hatton, J. Lloyd-Hughes

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

LanguageEnglish
Title of host publicationUltrafast Phenomena and Nanophotonics XXIII
EditorsMarkus Betz, Abdulhakem Y. Elezzabi
PublisherSPIE
Number of pages8
ISBN (Electronic)9781510624740
DOIs
StatePublished - 27 Feb 2019
EventUltrafast Phenomena and Nanophotonics XXIII 2019 - San Francisco, United States
Duration: 3 Feb 20196 Feb 2019

Publication series

NameProceedings of SPIE
Volume10916

Conference

ConferenceUltrafast Phenomena and Nanophotonics XXIII 2019
CountryUnited States
CitySan Francisco
Period3/02/196/02/19

Fingerprint

Perovskite
Hot carriers
Phonon
Photoconductivity
Semiconductors
Electron
Semiconductor materials
photoconductivity
Excess
Electrons
Lead
Energy
Electron-phonon Interaction
Electron-phonon interactions
electrons
Design Rules
Tin
carrier injection
Fatty Acids
Iodides

Keywords

  • Electron phonon coupling
  • Frolich
  • Hot carrier relaxation
  • Metal halide perovskite
  • Optical pump terahertz probe
  • Optoelectronics
  • Photovoltaics

Cite this

Monti, M., Woolley, J. M., Staniforth, M., Wijesekara, A., Tao, S. X., Bandara, R. M. I., ... Lloyd-Hughes, J. (2019). Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. In M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena and Nanophotonics XXIII [109160M] (Proceedings of SPIE; Vol. 10916). SPIE. DOI: 10.1117/12.2507268
Monti, M. ; Woolley, J.M. ; Staniforth, M. ; Wijesekara, A. ; Tao, S.X. ; Bandara, R.M.I. ; Jayawardena, I. ; Crocker, A. ; Griffin, E. ; Silva, S.R.P. ; Hatton, R.A. ; Lloyd-Hughes, J./ Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. Ultrafast Phenomena and Nanophotonics XXIII. editor / Markus Betz ; Abdulhakem Y. Elezzabi. SPIE, 2019. (Proceedings of SPIE).
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abstract = "The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.",
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author = "M. Monti and J.M. Woolley and M. Staniforth and A. Wijesekara and S.X. Tao and R.M.I. Bandara and I. Jayawardena and A. Crocker and E. Griffin and S.R.P. Silva and R.A. Hatton and J. Lloyd-Hughes",
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Monti, M, Woolley, JM, Staniforth, M, Wijesekara, A, Tao, SX, Bandara, RMI, Jayawardena, I, Crocker, A, Griffin, E, Silva, SRP, Hatton, RA & Lloyd-Hughes, J 2019, Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. in M Betz & AY Elezzabi (eds), Ultrafast Phenomena and Nanophotonics XXIII., 109160M, Proceedings of SPIE, vol. 10916, SPIE, Ultrafast Phenomena and Nanophotonics XXIII 2019, San Francisco, United States, 3/02/19. DOI: 10.1117/12.2507268

Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. / Monti, M.; Woolley, J.M.; Staniforth, M.; Wijesekara, A.; Tao, S.X.; Bandara, R.M.I.; Jayawardena, I.; Crocker, A.; Griffin, E.; Silva, S.R.P.; Hatton, R.A.; Lloyd-Hughes, J.

Ultrafast Phenomena and Nanophotonics XXIII. ed. / Markus Betz; Abdulhakem Y. Elezzabi. SPIE, 2019. 109160M (Proceedings of SPIE; Vol. 10916).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Griffin,E.

AU - Silva,S.R.P.

AU - Hatton,R.A.

AU - Lloyd-Hughes,J.

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N2 - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

AB - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

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M3 - Conference contribution

T3 - Proceedings of SPIE

BT - Ultrafast Phenomena and Nanophotonics XXIII

PB - SPIE

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Monti M, Woolley JM, Staniforth M, Wijesekara A, Tao SX, Bandara RMI et al. Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. In Betz M, Elezzabi AY, editors, Ultrafast Phenomena and Nanophotonics XXIII. SPIE. 2019. 109160M. (Proceedings of SPIE). Available from, DOI: 10.1117/12.2507268