Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

M. Monti; J.M. Woolley; M. Staniforth; A. Wijesekara; S.X. Tao; R.M.I. Bandara; I. Jayawardena; A. Crocker; E. Griffin; S.R.P. Silva; R.A. Hatton; J. Lloyd-Hughes

doi:10.1117/12.2507268

Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

M. Monti, J.M. Woolley, M. Staniforth, A. Wijesekara, S.X. Tao, R.M.I. Bandara, I. Jayawardena, A. Crocker, E. Griffin, S.R.P. Silva, R.A. Hatton, J. Lloyd-Hughes

Computational Materials Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs _1-x Rb _x SnI ₃ and compared to the lead based Cs _0:05 (FA _0:83 MA _0:17 ) _0:95 Pb(I _0:83 Br _0:17 ) ₃ . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

Original language	English
Title of host publication	Ultrafast Phenomena and Nanophotonics XXIII
Editors	Markus Betz, Abdulhakem Y. Elezzabi
Publisher	SPIE
Number of pages	8
ISBN (Electronic)	9781510624740
DOIs	https://doi.org/10.1117/12.2507268
Publication status	Published - 27 Feb 2019
Event	23rd Ultrafast Phenomena and Nanophotonics - San Francisco, United States Duration: 3 Feb 2019 → 6 Feb 2019 Conference number: 23

Publication series

Name	Proceedings of SPIE
Volume	10916

Conference

Conference	23rd Ultrafast Phenomena and Nanophotonics
Country/Territory	United States
City	San Francisco
Period	3/02/19 → 6/02/19

Keywords

Electron phonon coupling
Frolich
Hot carrier relaxation
Metal halide perovskite
Optical pump terahertz probe
Optoelectronics
Photovoltaics
metal halide perovskite
electron phonon coupling
photovoltaics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/12.2507268

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Monti, M., Woolley, J. M., Staniforth, M., Wijesekara, A., Tao, S. X., Bandara, R. M. I., Jayawardena, I., Crocker, A., Griffin, E., Silva, S. R. P., Hatton, R. A., & Lloyd-Hughes, J. (2019). Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. In M. Betz, & A. Y. Elezzabi (Eds.), Ultrafast Phenomena and Nanophotonics XXIII Article 109160M (Proceedings of SPIE; Vol. 10916). SPIE. https://doi.org/10.1117/12.2507268

@inproceedings{0476e37ff7684c6fa269a7d00241c79b,

title = "Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling",

abstract = " The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors. ",

keywords = "Electron phonon coupling, Frolich, Hot carrier relaxation, Metal halide perovskite, Optical pump terahertz probe, Optoelectronics, Photovoltaics, metal halide perovskite, electron phonon coupling, photovoltaics",

author = "M. Monti and J.M. Woolley and M. Staniforth and A. Wijesekara and S.X. Tao and R.M.I. Bandara and I. Jayawardena and A. Crocker and E. Griffin and S.R.P. Silva and R.A. Hatton and J. Lloyd-Hughes",

year = "2019",

month = feb,

day = "27",

doi = "10.1117/12.2507268",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

editor = "Markus Betz and Elezzabi, {Abdulhakem Y.}",

booktitle = "Ultrafast Phenomena and Nanophotonics XXIII",

address = "United States",

note = "23rd Ultrafast Phenomena and Nanophotonics ; Conference date: 03-02-2019 Through 06-02-2019",

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Monti, M, Woolley, JM, Staniforth, M, Wijesekara, A, Tao, SX, Bandara, RMI, Jayawardena, I, Crocker, A, Griffin, E, Silva, SRP, Hatton, RA & Lloyd-Hughes, J 2019, Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. in M Betz & AY Elezzabi (eds), Ultrafast Phenomena and Nanophotonics XXIII., 109160M, Proceedings of SPIE, vol. 10916, SPIE, 23rd Ultrafast Phenomena and Nanophotonics , San Francisco, California, United States, 3/02/19. https://doi.org/10.1117/12.2507268

Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling. / Monti, M.; Woolley, J.M.; Staniforth, M. et al.
Ultrafast Phenomena and Nanophotonics XXIII. ed. / Markus Betz; Abdulhakem Y. Elezzabi. SPIE, 2019. 109160M (Proceedings of SPIE; Vol. 10916).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

AU - Monti, M.

AU - Woolley, J.M.

AU - Staniforth, M.

AU - Wijesekara, A.

AU - Tao, S.X.

AU - Bandara, R.M.I.

AU - Jayawardena, I.

AU - Crocker, A.

AU - Griffin, E.

AU - Silva, S.R.P.

AU - Hatton, R.A.

AU - Lloyd-Hughes, J.

N1 - Conference code: 23

PY - 2019/2/27

Y1 - 2019/2/27

N2 - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

AB - The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs 1-x Rb x SnI 3 and compared to the lead based Cs 0:05 (FA 0:83 MA 0:17 ) 0:95 Pb(I 0:83 Br 0:17 ) 3 . Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.

KW - Electron phonon coupling

KW - Frolich

KW - Hot carrier relaxation

KW - Metal halide perovskite

KW - Optical pump terahertz probe

KW - Optoelectronics

KW - Photovoltaics

KW - metal halide perovskite

KW - electron phonon coupling

KW - photovoltaics

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U2 - 10.1117/12.2507268

DO - 10.1117/12.2507268

M3 - Conference contribution

AN - SCOPUS:85066043635

T3 - Proceedings of SPIE

BT - Ultrafast Phenomena and Nanophotonics XXIII

A2 - Betz, Markus

A2 - Elezzabi, Abdulhakem Y.

PB - SPIE

T2 - 23rd Ultrafast Phenomena and Nanophotonics

Y2 - 3 February 2019 through 6 February 2019

ER -

Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

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Keywords

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