Efficient green emission from wurtzite AlxIn1-xP nanowires

Luca Gagliano, Marijn Kruijsse, Joris D.D. Schefold, Abderrezak Belabbes, Marcel A. Verheijen, Sophie Meuret, Sebastian Koelling, Albert Polman, Friedhelm Bechstedt, Jos E.M. Haverkort, Erik P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Original languageEnglish
Article number3543-3549
JournalNano Letters
Volume18
DOIs
Publication statusPublished - 12 Feb 2018

Fingerprint

wurtzite
Nanowires
nanowires
Light emitting diodes
Energy gap
Amber
Metallorganic vapor phase epitaxy
light emitting diodes
Light emission
Crystal symmetry
Band structure
phosphides
Density functional theory
Photoluminescence
visible spectrum
vapor phase epitaxy
Transmission electron microscopy
crystals
Infrared radiation
light emission

Keywords

  • aluminum indium phosphide
  • direct band gap
  • green
  • Semiconductor nanowire
  • solid state lighting
  • wurtzite

Cite this

Gagliano, Luca ; Kruijsse, Marijn ; Schefold, Joris D.D. ; Belabbes, Abderrezak ; Verheijen, Marcel A. ; Meuret, Sophie ; Koelling, Sebastian ; Polman, Albert ; Bechstedt, Friedhelm ; Haverkort, Jos E.M. ; Bakkers, Erik P.A.M. / Efficient green emission from wurtzite AlxIn1-xP nanowires. In: Nano Letters. 2018 ; Vol. 18.
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abstract = "Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the {"}green gap{"}. Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the {"}pure green{"} 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.",
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author = "Luca Gagliano and Marijn Kruijsse and Schefold, {Joris D.D.} and Abderrezak Belabbes and Verheijen, {Marcel A.} and Sophie Meuret and Sebastian Koelling and Albert Polman and Friedhelm Bechstedt and Haverkort, {Jos E.M.} and Bakkers, {Erik P.A.M.}",
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Gagliano, L, Kruijsse, M, Schefold, JDD, Belabbes, A, Verheijen, MA, Meuret, S, Koelling, S, Polman, A, Bechstedt, F, Haverkort, JEM & Bakkers, EPAM 2018, 'Efficient green emission from wurtzite AlxIn1-xP nanowires', Nano Letters, vol. 18, 3543-3549. https://doi.org/10.1021/acs.nanolett.8b00621

Efficient green emission from wurtzite AlxIn1-xP nanowires. / Gagliano, Luca; Kruijsse, Marijn; Schefold, Joris D.D.; Belabbes, Abderrezak; Verheijen, Marcel A.; Meuret, Sophie; Koelling, Sebastian; Polman, Albert; Bechstedt, Friedhelm; Haverkort, Jos E.M.; Bakkers, Erik P.A.M.

In: Nano Letters, Vol. 18, 3543-3549, 12.02.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Efficient green emission from wurtzite AlxIn1-xP nanowires

AU - Gagliano, Luca

AU - Kruijsse, Marijn

AU - Schefold, Joris D.D.

AU - Belabbes, Abderrezak

AU - Verheijen, Marcel A.

AU - Meuret, Sophie

AU - Koelling, Sebastian

AU - Polman, Albert

AU - Bechstedt, Friedhelm

AU - Haverkort, Jos E.M.

AU - Bakkers, Erik P.A.M.

PY - 2018/2/12

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N2 - Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

AB - Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near infrared 875nm (1.42eV) and the "pure green" 555nm (2.23eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

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KW - solid state lighting

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JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

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Gagliano L, Kruijsse M, Schefold JDD, Belabbes A, Verheijen MA, Meuret S et al. Efficient green emission from wurtzite AlxIn1-xP nanowires. Nano Letters. 2018 Feb 12;18. 3543-3549. https://doi.org/10.1021/acs.nanolett.8b00621