Efficiency enhancement of InP nanowire solar cells by surface cleaning

Y. Cui; J. Wang; S.R. Plissard; A. Cavalli; T.T.T. Vu; P.J. Veldhoven, van; L. Gao; M.J. Trainor; M.A. Verheijen; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1021/nl4016182

Efficiency enhancement of InP nanowire solar cells by surface cleaning

Y. Cui, J. Wang, S.R. Plissard, A. Cavalli, T.T.T. Vu, P.J. Veldhoven, van, L. Gao, M.J. Trainor, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

Research output: Contribution to journal › Article › Academic › peer-review

133 Citations (Scopus)

5 Downloads (Pure)

Abstract

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

Original language	English
Pages (from-to)	4113-4117
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl4016182
Publication status	Published - 2013

Access to Document

10.1021/nl4016182

Cite this

@article{143860d27b7f4377afcdd434f097a7ef,

title = "Efficiency enhancement of InP nanowire solar cells by surface cleaning",

abstract = "We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.",

author = "Y. Cui and J. Wang and S.R. Plissard and A. Cavalli and T.T.T. Vu and {Veldhoven, van}, P.J. and L. Gao and M.J. Trainor and M.A. Verheijen and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2013",

doi = "10.1021/nl4016182",

language = "English",

volume = "13",

pages = "4113--4117",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Efficiency enhancement of InP nanowire solar cells by surface cleaning

AU - Cui, Y.

AU - Wang, J.

AU - Plissard, S.R.

AU - Cavalli, A.

AU - Vu, T.T.T.

AU - Veldhoven, van, P.J.

AU - Gao, L.

AU - Trainor, M.J.

AU - Verheijen, M.A.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2013

Y1 - 2013

N2 - We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

AB - We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

U2 - 10.1021/nl4016182

DO - 10.1021/nl4016182

M3 - Article

C2 - 23898896

SN - 1530-6984

VL - 13

SP - 4113

EP - 4117

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Efficiency enhancement of InP nanowire solar cells by surface cleaning

Abstract

Access to Document

Fingerprint

Cite this