on-implanted power MESFETs have been submitted to RF life-test under gain compression. Devices went through RF life-test with no significant dynamic performance drift but with DC parameter evolution. A complete electrical characterisation performed by low frequency gate and drain noise analysis combined with drain current transient spectroscopy revealed that no degradation has occurred in the channel. An increase by two orders of magnitude of the LF gate noise level points out a degradation located in the vicinity of the gate.
|Title of host publication||10th European symposium on reliability of electron devices failure physics and analysis (ESREF)99|
|Publication status||Published - 1999|
|Event||European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99) - |
Duration: 1 Jan 1999 → …
|Conference||European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99)|
|Period||1/01/99 → …|
Saysset-Malbert, N., Lambert, B., Maneux, N. C., Labat, N., Touboul, A., Danto, Y., Vandamme, L. K. J., Huguet, P., Auxemery, P., & Garat, F. (1999). Effects of RF life-test on LF electrical parameters of GaAs power MESFETs. In 10th European symposium on reliability of electron devices failure physics and analysis (ESREF)99 (pp. 1061-1066). (Microelectronics reliability; Vol. 39, No. 6-7). https://doi.org/10.1016/S0026-2714(99)00147-X