Effects of RF life-test on LF electrical parameters of GaAs power MESFETs

N. Saysset-Malbert, B. Lambert, N.C. Maneux, N. Labat, A. Touboul, Y. Danto, L.K.J. Vandamme, P. Huguet, P. Auxemery, F. Garat

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

on-implanted power MESFETs have been submitted to RF life-test under gain compression. Devices went through RF life-test with no significant dynamic performance drift but with DC parameter evolution. A complete electrical characterisation performed by low frequency gate and drain noise analysis combined with drain current transient spectroscopy revealed that no degradation has occurred in the channel. An increase by two orders of magnitude of the LF gate noise level points out a degradation located in the vicinity of the gate.
Original languageEnglish
Title of host publication10th European symposium on reliability of electron devices failure physics and analysis (ESREF)99
Pages1061-1066
DOIs
Publication statusPublished - 1999
EventEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99) -
Duration: 1 Jan 1999 → …

Publication series

NameMicroelectronics reliability
Number6-7
Volume39
ISSN (Print)0026-2714

Conference

ConferenceEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99)
Period1/01/99 → …

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    Saysset-Malbert, N., Lambert, B., Maneux, N. C., Labat, N., Touboul, A., Danto, Y., Vandamme, L. K. J., Huguet, P., Auxemery, P., & Garat, F. (1999). Effects of RF life-test on LF electrical parameters of GaAs power MESFETs. In 10th European symposium on reliability of electron devices failure physics and analysis (ESREF)99 (pp. 1061-1066). (Microelectronics reliability; Vol. 39, No. 6-7). https://doi.org/10.1016/S0026-2714(99)00147-X