Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

Y. Cho; M. Korytov; M. Albrecht; H. Riechert; O. Brandt

doi:10.1063/1.4739941

Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

Y. Cho, M. Korytov, M. Albrecht, H. Riechert, O. Brandt

Photonics and Semiconductor Nanophysics

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Abstract

We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]

Original language	English
Article number	052103
Pages (from-to)	1-5
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4739941
Publication status	Published - 2012

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title = "Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy",

abstract = "We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]",

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T1 - Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

AU - Cho, Y.

AU - Korytov, M.

AU - Albrecht, M.

AU - Riechert, H.

AU - Brandt, O.

PY - 2012

Y1 - 2012

N2 - We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]

AB - We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]

U2 - 10.1063/1.4739941

DO - 10.1063/1.4739941

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052103

ER -

Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

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