Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy

Y. Cho, M. Korytov, M. Albrecht, H. Riechert, O. Brandt

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Abstract

We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]
Original languageEnglish
Article number052103
Pages (from-to)1-5
JournalApplied Physics Letters
Volume101
Issue number5
DOIs
Publication statusPublished - 2012

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molecular beam epitaxy
chemical reactions
inversions
temperature

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Cho, Y. ; Korytov, M. ; Albrecht, M. ; Riechert, H. ; Brandt, O. / Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy. In: Applied Physics Letters. 2012 ; Vol. 101, No. 5. pp. 1-5.
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Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy. / Cho, Y.; Korytov, M.; Albrecht, M.; Riechert, H.; Brandt, O.

In: Applied Physics Letters, Vol. 101, No. 5, 052103, 2012, p. 1-5.

Research output: Contribution to journalArticleAcademicpeer-review

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