Abstract
| Original language | English |
|---|---|
| Article number | 052103 |
| Pages (from-to) | 1-5 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2012 |
Fingerprint
Cite this
}
Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy. / Cho, Y.; Korytov, M.; Albrecht, M.; Riechert, H.; Brandt, O.
In: Applied Physics Letters, Vol. 101, No. 5, 052103, 2012, p. 1-5.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Effects of Ga on the growth of InN on O-face ZnO(000(1)over-bar) by plasma-assisted molecular beam epitaxy
AU - Cho, Y.
AU - Korytov, M.
AU - Albrecht, M.
AU - Riechert, H.
AU - Brandt, O.
PY - 2012
Y1 - 2012
N2 - We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]
AB - We compare the structural properties of InN and In0.95Ga0.05N films grown on O-face ZnO(000 (1) over bar) substrates at different temperatures. The small amount of Ga results in dramatic changes in the morphology and structural properties of InN. In particular, inversion domains start to appear at higher temperatures in the In0.95Ga0.05N film. This process is a consequence of the chemical reaction of ZnO with Ga which can be prevented by choosing the substrate temperature to be 450 degrees C or below. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739941]
U2 - 10.1063/1.4739941
DO - 10.1063/1.4739941
M3 - Article
VL - 101
SP - 1
EP - 5
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 052103
ER -