Effects of crystal phase mixing on the electrical properties of InAs nanowires

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Research output: Contribution to journalArticleAcademicpeer-review

181 Citations (Scopus)

Abstract

We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.
Original languageEnglish
Pages (from-to)2424-2429
JournalNano Letters
Volume11
Issue number6
DOIs
Publication statusPublished - 2011

Fingerprint Dive into the research topics of 'Effects of crystal phase mixing on the electrical properties of InAs nanowires'. Together they form a unique fingerprint.

Cite this