Effect of stray field on local spin modes in exchange-biased magnetic tunnel junction elements

J.H.H. Rietjens; C. Józsa; W.J.M. Jonge, de; B. Koopmans; H. Boeve

doi:10.1063/1.2117614

Effect of stray field on local spin modes in exchange-biased magnetic tunnel junction elements

J.H.H. Rietjens, C. Józsa, W.J.M. Jonge, de, B. Koopmans, H. Boeve

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Abstract

We report on the detection of localized spin modes in a multilayered spintronic device by means of time-resolved scanning Kerr microscopy. Measurements on this 13×9 µ m2 exchange-biased magnetic tunnel junction element at different applied bias fields indicate a strong effect of the stray field from the pinned CoFe layer on the magnetization dynamics in the free NiFe layer. This view is supported by micromagnetic simulations, which also show that the dynamics can be attributed to the specific shape of the internal magnetic field in the element. © 2005 American Institute of Physics.

Original language	English
Article number	172508
Pages (from-to)	172508-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	17
DOIs	https://doi.org/10.1063/1.2117614
Publication status	Published - 2005

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title = "Effect of stray field on local spin modes in exchange-biased magnetic tunnel junction elements",

abstract = "We report on the detection of localized spin modes in a multilayered spintronic device by means of time-resolved scanning Kerr microscopy. Measurements on this 13×9 µ m2 exchange-biased magnetic tunnel junction element at different applied bias fields indicate a strong effect of the stray field from the pinned CoFe layer on the magnetization dynamics in the free NiFe layer. This view is supported by micromagnetic simulations, which also show that the dynamics can be attributed to the specific shape of the internal magnetic field in the element. {\textcopyright} 2005 American Institute of Physics.",

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AU - Rietjens, J.H.H.

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AU - Koopmans, B.

AU - Boeve, H.

PY - 2005

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AB - We report on the detection of localized spin modes in a multilayered spintronic device by means of time-resolved scanning Kerr microscopy. Measurements on this 13×9 µ m2 exchange-biased magnetic tunnel junction element at different applied bias fields indicate a strong effect of the stray field from the pinned CoFe layer on the magnetization dynamics in the free NiFe layer. This view is supported by micromagnetic simulations, which also show that the dynamics can be attributed to the specific shape of the internal magnetic field in the element. © 2005 American Institute of Physics.

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DO - 10.1063/1.2117614

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Effect of stray field on local spin modes in exchange-biased magnetic tunnel junction elements

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