Effect of ion bombardment on the a-Si : H based surface passivation of c-Si surfaces

A. Illiberi, P. Kudlacek, A.H.M. Smets, M. Creatore, M.C.M. Sanden, van de

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Abstract

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015 ions¿cm-2¿s-1). This result suggests that the ion flux determines the generation rate of electron–hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron–hole pairs are discussed.
Original languageEnglish
Article number242115
Pages (from-to)242115-1/3
JournalApplied Physics Letters
Volume98
Issue number24
DOIs
Publication statusPublished - 2011

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