Abstract
Mol. dynamics simulations have been performed to investigate the growth of thin hydrogenated amorphous carbon (a-C:H) films from radical species with thermal energy. It is found that the incorporation of H into the film increases the mass d. The max. mass d. is reached for a H flux of about 10%. The atom d. of the films reaches a max. at a H flux of about 30%. It is shown that these effects are a result of the change in microstructure of the films, including a H-induced sp to sp2 to sp3 shift. These results are important for thin a-C:H film deposition techniques where chemisorption of radical species is the main growth mechanism. [on SciFinder (R)]
| Original language | English |
|---|---|
| Article number | 141922 |
| Pages (from-to) | 141922-1/3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2006 |
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