Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, Wiebe De Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

Research output: Contribution to journalArticleAcademicpeer-review

26 Citations (Scopus)


Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1-350°CVs, and peak temperatures in the range 900-1100°C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

Original languageEnglish
Pages (from-to)889-891
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 12 Feb 2001
Externally publishedYes


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