Effect of gate-field dependent mobility degradation on distortion analysis in MOSFET's

R. Langevelde, van, F.M. Klaassen

Research output: Contribution to journalArticleAcademicpeer-review

79 Citations (Scopus)
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Abstract

Compact MOSFET models in contemporary circuit simulators fail to accurately describe distortion effects. In the ohmic region of the MOSFET, this failure is mainly due to inaccurate modeling of the gate-field dependent mobility degradation effect. In this paper a new model for mobility degradation Is introduced which gives a major improvement in distortion analysis in the linear region for both n-type and p-type MOS transistors. Incorporating a gate voltage dependent series resistance, this model even gives good results for very short channel length devices
Original languageEnglish
Pages (from-to)2044-2052
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume44
Issue number11
DOIs
Publication statusPublished - 1997

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