Abstract
We have fabricated two types of integrated optical amplifiers using a Selective Area
Chemical Beam Epitaxy regrowth step. In the first type of amplifier, the Multi Quantum
Well active layer is on top of a waveguiding film, and the transition from the active to
the passive regions is characterized by a small residual reflection. In the second type,
the active layer is in the center of the film, and the residual reflection is very low. We
report on the influence of the residual inter-cavity butt joint reflections on the
performance of Extended Cavity Lasers and Phased Array Multi-Wavelength Lasers.
Original language | English |
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Title of host publication | Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands |
Editors | X.J.M. Leijtens, J.H. Besten, den |
Place of Publication | Delft |
Publisher | Technische Universiteit Delft |
Pages | 123-126 |
ISBN (Print) | 90-9014260-6 |
Publication status | Published - 2000 |
Event | 5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Netherlands Duration: 30 Oct 2000 → 30 Oct 2000 |
Conference
Conference | 5th Annual Symposium of the IEEE/LEOS Benelux Chapter |
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Country/Territory | Netherlands |
City | Delft |
Period | 30/10/00 → 30/10/00 |
Other | IEEE/LEOS symposium |