Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

B.A. Korevaar, A.M.H.N. Petit, C. Smit, R.A.C.M.M. van Swaaij, M.C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.

Original languageEnglish
Title of host publicationConference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1230-1233
Number of pages4
ISBN (Print)0-7803-7471-1
DOIs
Publication statusPublished - 1 Dec 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002

Conference

Conference29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period19/05/0224/05/02

Keywords

  • a-Si:H
  • High growth rates
  • Solar Cells

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