Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

B.A. Korevaar; A.M.H.N. Petit; C. Smit; R.A.C.M.M. van Swaaij; M.C.M. van de Sanden

doi:10.1109/PVSC.2002.1190830

Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

B.A. Korevaar, A.M.H.N. Petit, C. Smit, R.A.C.M.M. van Swaaij, M.C.M. van de Sanden

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.

Original language	English
Title of host publication	Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1230-1233
Number of pages	4
ISBN (Print)	0-7803-7471-1
DOIs	https://doi.org/10.1109/PVSC.2002.1190830
Publication status	Published - 1 Dec 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Keywords

a-Si:H
High growth rates
Solar Cells

Access to Document

10.1109/PVSC.2002.1190830

Cite this

Korevaar, B. A., Petit, A. M. H. N., Smit, C., van Swaaij, R. A. C. M. M., & van de Sanden, M. C. M. (2002). Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma. In Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002 (pp. 1230-1233). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2002.1190830

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title = "Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma",

abstract = "With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.",

keywords = "a-Si:H, High growth rates, Solar Cells",

author = "B.A. Korevaar and A.M.H.N. Petit and C. Smit and {van Swaaij}, R.A.C.M.M. and {van de Sanden}, M.C.M.",

year = "2002",

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note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

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Korevaar, BA, Petit, AMHN, Smit, C, van Swaaij, RACMM & van de Sanden, MCM 2002, Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma. in Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1230-1233, 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States, 19/05/02. https://doi.org/10.1109/PVSC.2002.1190830

Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma. / Korevaar, B.A.; Petit, A.M.H.N.; Smit, C. et al.
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Piscataway: Institute of Electrical and Electronics Engineers, 2002. p. 1230-1233.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

AU - Korevaar, B.A.

AU - Petit, A.M.H.N.

AU - Smit, C.

AU - van Swaaij, R.A.C.M.M.

AU - van de Sanden, M.C.M.

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N2 - With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.

AB - With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.

KW - a-Si:H

KW - High growth rates

KW - Solar Cells

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Korevaar BA, Petit AMHN, Smit C, van Swaaij RACMM, van de Sanden MCM. Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma. In Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Piscataway: Institute of Electrical and Electronics Engineers. 2002. p. 1230-1233 doi: 10.1109/PVSC.2002.1190830

Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

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Keywords

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