Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

A. Alzeidan; T.F. Cantalice; K.D. Vallejo; R.S.R. Gajjela; A.L. Hendriks; P.J. Simmonds; P.M. Koenraad; A. A. Quivy

doi:10.1016/j.sna.2021.113357

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

A. Alzeidan (Corresponding author), T.F. Cantalice, K.D. Vallejo, R.S.R. Gajjela, A.L. Hendriks, P.J. Simmonds, P.M. Koenraad, A. A. Quivy

Photonics and Semiconductor Nanophysics

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Abstract

The performance of infrared photodetectors based on submonolayer quantum dots was investigated as a function of the arsenic flux. All the devices showed similar figures of merit and a very high specific detectivity above 1 × 10¹¹ cm Hz^1/2/W at 12 K, despite the fact that cross-sectional scanning tunneling microscopy images pointed out a strong reduction in the density of such nanostructures with decreasing arsenic flux. This contrast is a consequence of the small size and low In content of the submonolayer quantum dots that lead to a strong delocalization of the electrons wave function and, therefore, reduce the advantage of samples having a very high density of quantum dots. A simple strain model showed that the properties of these nanostructures are limited by the lack of vertical alignment of the small two-dimensional InAs islands resulting from the strong segregation of In atoms. We have proposed some ways to improve the growth of submonolayer quantum dots and believe that, after further optimization, such nanostructures might provide devices with superior performance.

Original language	English
Article number	113357
Number of pages	8
Journal	Sensors and Actuators, A: Physical
Volume	334
DOIs	https://doi.org/10.1016/j.sna.2021.113357
Publication status	Published - 1 Feb 2022

Funding

Kevin Vallejo is a Ph.D. student at Boise State University scheduled to graduate in the Fall of 2021. He obtained a Bachelor of Science degree from The University of Texas at El Paso in 2016, and a Master´s degree in Engineering from Boise State University in 2020. During the Spring 2015 semester, Kevin received the US Department of State Benjamin A. Gilman scholarship to study at Åbo Akademi University in Finland. In 2019, he received the US National Nuclear Science Foundation Graduate Fellowship, the US Intelligence Community Postdoctoral Fellowship, and Dean's Scholar award from Boise State University for outstanding scholarship. This study was financed in part by the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - Brasil ( CAPES ) - Finance Code 001 , by CNPq (grant 311687/2017-2 ), and by European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie project 4PHOTON grant agreement No 721394 .

Funders	Funder number
Boise State University
European Union's Horizon 2020 - Research and Innovation Framework Programme
Marie Skłodowska‐Curie	721394

Keywords

InAs
Infrared photodetector
Molecular beam epitaxy
Scanning tunneling microscopy
Segregation
Submonolayer quantum dots

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10.1016/j.sna.2021.113357

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@article{9eadec3023c6402a83af0661e003001e,

title = "Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors",

abstract = "The performance of infrared photodetectors based on submonolayer quantum dots was investigated as a function of the arsenic flux. All the devices showed similar figures of merit and a very high specific detectivity above 1 × 1011 cm Hz1/2/W at 12 K, despite the fact that cross-sectional scanning tunneling microscopy images pointed out a strong reduction in the density of such nanostructures with decreasing arsenic flux. This contrast is a consequence of the small size and low In content of the submonolayer quantum dots that lead to a strong delocalization of the electrons wave function and, therefore, reduce the advantage of samples having a very high density of quantum dots. A simple strain model showed that the properties of these nanostructures are limited by the lack of vertical alignment of the small two-dimensional InAs islands resulting from the strong segregation of In atoms. We have proposed some ways to improve the growth of submonolayer quantum dots and believe that, after further optimization, such nanostructures might provide devices with superior performance.",

keywords = "InAs, Infrared photodetector, Molecular beam epitaxy, Scanning tunneling microscopy, Segregation, Submonolayer quantum dots",

author = "A. Alzeidan and T.F. Cantalice and K.D. Vallejo and R.S.R. Gajjela and A.L. Hendriks and P.J. Simmonds and P.M. Koenraad and Quivy, {A. A.}",

note = "Funding Information: This study was financed in part by the Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - Brasil (CAPES) - Finance Code 001, by CNPq (grant 311687/2017-2), and by European Union's Horizon 2020 research and innovation program under the Marie Sk?odowska-Curie project 4PHOTON grant agreement No 721394. Funding Information: Kevin Vallejo is a Ph.D. student at Boise State University scheduled to graduate in the Fall of 2021. He obtained a Bachelor of Science degree from The University of Texas at El Paso in 2016, and a Master´s degree in Engineering from Boise State University in 2020. During the Spring 2015 semester, Kevin received the US Department of State Benjamin A. Gilman scholarship to study at {\AA}bo Akademi University in Finland. In 2019, he received the US National Nuclear Science Foundation Graduate Fellowship, the US Intelligence Community Postdoctoral Fellowship, and Dean's Scholar award from Boise State University for outstanding scholarship. Funding Information: This study was financed in part by the Coordena{\c c}{\~a}o de Aperfei{\c c}oamento de Pessoal de N{\'i}vel Superior - Brasil ( CAPES ) - Finance Code 001 , by CNPq (grant 311687/2017-2 ), and by European Union{\textquoteright}s Horizon 2020 research and innovation program under the Marie Sk{\l}odowska-Curie project 4PHOTON grant agreement No 721394 . Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

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AU - Alzeidan, A.

AU - Cantalice, T.F.

AU - Vallejo, K.D.

AU - Gajjela, R.S.R.

AU - Hendriks, A.L.

AU - Simmonds, P.J.

AU - Koenraad, P.M.

AU - Quivy, A. A.

N1 - Funding Information: This study was financed in part by the Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - Brasil (CAPES) - Finance Code 001, by CNPq (grant 311687/2017-2), and by European Union's Horizon 2020 research and innovation program under the Marie Sk?odowska-Curie project 4PHOTON grant agreement No 721394. Funding Information: Kevin Vallejo is a Ph.D. student at Boise State University scheduled to graduate in the Fall of 2021. He obtained a Bachelor of Science degree from The University of Texas at El Paso in 2016, and a Master´s degree in Engineering from Boise State University in 2020. During the Spring 2015 semester, Kevin received the US Department of State Benjamin A. Gilman scholarship to study at Åbo Akademi University in Finland. In 2019, he received the US National Nuclear Science Foundation Graduate Fellowship, the US Intelligence Community Postdoctoral Fellowship, and Dean's Scholar award from Boise State University for outstanding scholarship. Funding Information: This study was financed in part by the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - Brasil ( CAPES ) - Finance Code 001 , by CNPq (grant 311687/2017-2 ), and by European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie project 4PHOTON grant agreement No 721394 . Publisher Copyright: © 2021 Elsevier B.V.

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N2 - The performance of infrared photodetectors based on submonolayer quantum dots was investigated as a function of the arsenic flux. All the devices showed similar figures of merit and a very high specific detectivity above 1 × 1011 cm Hz1/2/W at 12 K, despite the fact that cross-sectional scanning tunneling microscopy images pointed out a strong reduction in the density of such nanostructures with decreasing arsenic flux. This contrast is a consequence of the small size and low In content of the submonolayer quantum dots that lead to a strong delocalization of the electrons wave function and, therefore, reduce the advantage of samples having a very high density of quantum dots. A simple strain model showed that the properties of these nanostructures are limited by the lack of vertical alignment of the small two-dimensional InAs islands resulting from the strong segregation of In atoms. We have proposed some ways to improve the growth of submonolayer quantum dots and believe that, after further optimization, such nanostructures might provide devices with superior performance.

AB - The performance of infrared photodetectors based on submonolayer quantum dots was investigated as a function of the arsenic flux. All the devices showed similar figures of merit and a very high specific detectivity above 1 × 1011 cm Hz1/2/W at 12 K, despite the fact that cross-sectional scanning tunneling microscopy images pointed out a strong reduction in the density of such nanostructures with decreasing arsenic flux. This contrast is a consequence of the small size and low In content of the submonolayer quantum dots that lead to a strong delocalization of the electrons wave function and, therefore, reduce the advantage of samples having a very high density of quantum dots. A simple strain model showed that the properties of these nanostructures are limited by the lack of vertical alignment of the small two-dimensional InAs islands resulting from the strong segregation of In atoms. We have proposed some ways to improve the growth of submonolayer quantum dots and believe that, after further optimization, such nanostructures might provide devices with superior performance.

KW - InAs

KW - Infrared photodetector

KW - Molecular beam epitaxy

KW - Scanning tunneling microscopy

KW - Segregation

KW - Submonolayer quantum dots

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DO - 10.1016/j.sna.2021.113357

M3 - Article

AN - SCOPUS:85122239252

SN - 0924-4247

VL - 334

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

M1 - 113357

ER -

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

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