Effect of a parallel capacitor on the stability of the DC-configurations of a DBRT-structure

H.P. Joosten, H.J.M.F. Noteborn, K. Kaski, D. Lenstra

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

A recently developed, heuristic model to determine the conditions under which stable biasing of double-barrier resonant-tunneling devices can be achieved, is used to study the effect of the biasing circuit. For an asymmetric GaAs/AlGaAs-based structure, the regions of stable and unstable behavior are calculated. Phase diagrams are presented, showing the effects of a parallel capacitor on the circuit stability of the structure.

Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalPhysica B: Physics of Condensed Matter
Volume175
Issue number1-3
DOIs
Publication statusPublished - 1 Dec 1991

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