Abstract
The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots (QDs) grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In0.53 Ga0.47 As -capped QDs are clearly truncated pyramids, GaAs0.51 Sb0.49 -capped QDs grown under the same conditions look like full pyramids and exhibit a larger height, indicating that capping with GaAsSb reduces dot decomposition. Since there are no differences in strain between the two capping layers, this behavior is most likely related to the surfactant effect of Sb, which stabilizes the growth front and avoids adatom migration. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 074309
| Original language | English |
|---|---|
| Article number | 074309 |
| Pages (from-to) | 074309-1/4 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 107 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2010 |