ECS Transactions: preface

V. Narayanan; F. Roozeboom; D.L. Kwong; H. Iwai; E.P. Gusev; P.J. Timans

ECS Transactions: preface

V. Narayanan, F. Roozeboom, D.L. Kwong, H. Iwai, E.P. Gusev, P.J. Timans

Plasma & Materials Processing

Research output: Contribution to journal › Editorial › Academic › peer-review

Original language	English
Journal	ECS Transactions
Volume	19
Issue number	1
Publication status	Published - 1 Dec 2009
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting - San Francisco, CA, United States Duration: 24 May 2009 → 29 May 2009

Cite this

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title = "ECS Transactions: preface",

author = "V. Narayanan and F. Roozeboom and D.L. Kwong and H. Iwai and E.P. Gusev and P.J. Timans",

year = "2009",

month = dec,

day = "1",

language = "English",

volume = "19",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

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note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

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TY - JOUR

T1 - ECS Transactions

T2 - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting

AU - Narayanan, V.

AU - Roozeboom, F.

AU - Kwong, D.L.

AU - Iwai, H.

AU - Gusev, E.P.

AU - Timans, P.J.

PY - 2009/12/1

Y1 - 2009/12/1

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M3 - Editorial

AN - SCOPUS:74949131683

SN - 1938-5862

VL - 19

JO - ECS Transactions

JF - ECS Transactions

IS - 1

Y2 - 24 May 2009 through 29 May 2009

ER -

ECS Transactions: preface

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