ECS Transactions: preface

E.P. Gusev; H. Iwai; D.L. Kwong; F. Roozeboom; M.C. Öztürk; P.J. Timans; V. Narayanan

ECS Transactions: preface

E.P. Gusev, H. Iwai, D.L. Kwong, F. Roozeboom, M.C. Öztürk, P.J. Timans, V. Narayanan

Plasma & Materials Processing

Research output: Contribution to journal › Editorial › Academic › peer-review

Original language	English
Pages (from-to)	iii-x
Number of pages	7
Journal	ECS Transactions
Volume	28
Issue number	1
Publication status	Published - 30 Dec 2010
Event	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 26 Apr 2010 → 27 Apr 2010

Cite this

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title = "ECS Transactions: preface",

author = "E.P. Gusev and H. Iwai and D.L. Kwong and F. Roozeboom and M.C. {\"O}zt{\"u}rk and P.J. Timans and V. Narayanan",

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language = "English",

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T1 - ECS Transactions

T2 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting

AU - Gusev, E.P.

AU - Iwai, H.

AU - Kwong, D.L.

AU - Roozeboom, F.

AU - Öztürk, M.C.

AU - Timans, P.J.

AU - Narayanan, V.

PY - 2010/12/30

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M3 - Editorial

AN - SCOPUS:78650568442

SN - 1938-5862

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SP - iii-x

JO - ECS Transactions

JF - ECS Transactions

IS - 1

Y2 - 26 April 2010 through 27 April 2010

ER -

ECS Transactions: preface

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