Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistor

S.G.J. Mathijssen; M. Cölle; H.L. Gomes; E.C.P. Smits; B. Boer, de; I. McCulloch; P.A. Bobbert; D.M. Leeuw, de

doi:10.1002/adma.200602798

Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistor

S.G.J. Mathijssen, M. Cölle, H.L. Gomes, E.C.P. Smits, B. Boer, de, I. McCulloch, P.A. Bobbert, D.M. Leeuw, de

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

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Original language	English
Pages (from-to)	2785-2789
Journal	Advanced Materials
Volume	19
Issue number	19
DOIs	https://doi.org/10.1002/adma.200602798
Publication status	Published - 2007

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title = "Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistor",

abstract = "No abstract",

author = "S.G.J. Mathijssen and M. C{\"o}lle and H.L. Gomes and E.C.P. Smits and {Boer, de}, B. and I. McCulloch and P.A. Bobbert and {Leeuw, de}, D.M.",

year = "2007",

doi = "10.1002/adma.200602798",

language = "English",

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pages = "2785--2789",

journal = "Advanced Materials",

issn = "0935-9648",

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AU - Mathijssen, S.G.J.

AU - Cölle, M.

AU - Gomes, H.L.

AU - Smits, E.C.P.

AU - Boer, de, B.

AU - McCulloch, I.

AU - Bobbert, P.A.

AU - Leeuw, de, D.M.

PY - 2007

Y1 - 2007

N2 - No abstract

AB - No abstract

U2 - 10.1002/adma.200602798

DO - 10.1002/adma.200602798

M3 - Article

VL - 19

SP - 2785

EP - 2789

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 19

ER -

Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistor

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