A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were two routes to chaos are implicated. Finally, we confirm the calculations by showing an avoided crossing type of behavior for the coupling strength.
|Name||Proceedings of SPIE|
|Conference||conference; Semiconductor lasers and laser dynamics|
|Period||1/01/04 → …|
|Other||Semiconductor lasers and laser dynamics|