Dynamics and nucleation of Si ad-dimers on the Si(100) surface

G. Brocks, P.J. Kelly

Research output: Contribution to journalArticleAcademicpeer-review

108 Citations (Scopus)
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Abstract

The motion of Si ad-dimers on the Si(100) surface is studied by means of ab initio (Car-Parrinello) molecular dynamics. We observe dynamic buckling of the dimers and the rotation of a single ad-dimer on top of a substrate dimer row. A model is presented for the structure and the formation of the recently observed “dilute” ad-dimer rows, which explains their one-dimensional growth. We propose that these rows are intermediate structures for the strongly anisotropic epitaxial growth on Si(100).

Original languageEnglish
Pages (from-to)2362-2365
Number of pages4
JournalPhysical Review Letters
Volume76
Issue number13
DOIs
Publication statusPublished - 25 Mar 1996
Externally publishedYes

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dimers
nucleation
buckling
molecular dynamics

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abstract = "The motion of Si ad-dimers on the Si(100) surface is studied by means of ab initio (Car-Parrinello) molecular dynamics. We observe dynamic buckling of the dimers and the rotation of a single ad-dimer on top of a substrate dimer row. A model is presented for the structure and the formation of the recently observed “dilute” ad-dimer rows, which explains their one-dimensional growth. We propose that these rows are intermediate structures for the strongly anisotropic epitaxial growth on Si(100).",
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Dynamics and nucleation of Si ad-dimers on the Si(100) surface. / Brocks, G.; Kelly, P.J.

In: Physical Review Letters, Vol. 76, No. 13, 25.03.1996, p. 2362-2365.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Kelly, P.J.

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AB - The motion of Si ad-dimers on the Si(100) surface is studied by means of ab initio (Car-Parrinello) molecular dynamics. We observe dynamic buckling of the dimers and the rotation of a single ad-dimer on top of a substrate dimer row. A model is presented for the structure and the formation of the recently observed “dilute” ad-dimer rows, which explains their one-dimensional growth. We propose that these rows are intermediate structures for the strongly anisotropic epitaxial growth on Si(100).

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