Dynamic scaling of plasma etched InP surface

M. Silova; D.M. Bruls; A.Y. Silov; B.H. Roy, van; E. Smalbrugge; F. Karouta; P.M. Koenraad; J.H. Wolter

doi:10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface

M. Silova, D.M. Bruls, A.Y. Silov, B.H. Roy, van, E. Smalbrugge, F. Karouta, P.M. Koenraad, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

Original language	English
Title of host publication	Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA
Place of Publication	New York
Publisher	Institute of Electrical and Electronics Engineers
Pages	201-204
ISBN (Print)	0-7803-6320-5
DOIs	https://doi.org/10.1109/ICIPRM.2000.850267
Publication status	Published - 2000
Event	conference; 12th int. conf. on InP and related materials - Duration: 1 Jan 2000 → …

Conference

Conference	conference; 12th int. conf. on InP and related materials
Period	1/01/00 → …
Other	12th int. conf. on InP and related materials

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10.1109/ICIPRM.2000.850267

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Silova, M., Bruls, D. M., Silov, A. Y., Roy, van, B. H., Smalbrugge, E., Karouta, F., Koenraad, P. M., & Wolter, J. H. (2000). Dynamic scaling of plasma etched InP surface. In Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA (pp. 201-204). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2000.850267

@inproceedings{ec8b3e79a32242bf972200533f5ad654,

title = "Dynamic scaling of plasma etched InP surface",

abstract = "Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent ({\ss}=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP",

author = "M. Silova and D.M. Bruls and A.Y. Silov and {Roy, van}, B.H. and E. Smalbrugge and F. Karouta and P.M. Koenraad and J.H. Wolter",

year = "2000",

doi = "10.1109/ICIPRM.2000.850267",

language = "English",

isbn = "0-7803-6320-5",

pages = "201--204",

booktitle = "Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; 12th int. conf. on InP and related materials ; Conference date: 01-01-2000",

}

Silova, M, Bruls, DM, Silov, AY, Roy, van, BH, Smalbrugge, E, Karouta, F, Koenraad, PM & Wolter, JH 2000, Dynamic scaling of plasma etched InP surface. in Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. Institute of Electrical and Electronics Engineers, New York, pp. 201-204, conference; 12th int. conf. on InP and related materials, 1/01/00. https://doi.org/10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface. / Silova, M.; Bruls, D.M.; Silov, A.Y. et al.
Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. New York: Institute of Electrical and Electronics Engineers, 2000. p. 201-204.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Dynamic scaling of plasma etched InP surface

AU - Silova, M.

AU - Bruls, D.M.

AU - Silov, A.Y.

AU - Roy, van, B.H.

AU - Smalbrugge, E.

AU - Karouta, F.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

AB - Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (ß=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP

U2 - 10.1109/ICIPRM.2000.850267

DO - 10.1109/ICIPRM.2000.850267

M3 - Conference contribution

SN - 0-7803-6320-5

SP - 201

EP - 204

BT - Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA

PB - Institute of Electrical and Electronics Engineers

CY - New York

T2 - conference; 12th int. conf. on InP and related materials

Y2 - 1 January 2000

ER -

Silova M, Bruls DM, Silov AY, Roy, van BH, Smalbrugge E, Karouta F et al. Dynamic scaling of plasma etched InP surface. In Proceedings of the 12th International Conference on Indium Phosphide and Related Materials (ICIPRM 2000), 14-18 May 2000, Williamsburg, VA, USA. New York: Institute of Electrical and Electronics Engineers. 2000. p. 201-204 doi: 10.1109/ICIPRM.2000.850267

Dynamic scaling of plasma etched InP surface

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