DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier

J.M. Shi, P.M. Koenraad, A.F.W. Stadt, van de, F.M. Peeters, J.T. Devreese, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationProc. Int. Conf. on the Physics of Semiconductors
Place of PublicationBerlin, Germany
Pages2355-2358
Publication statusPublished - 1996

Cite this

Shi, J. M., Koenraad, P. M., Stadt, van de, A. F. W., Peeters, F. M., Devreese, J. T., & Wolter, J. H. (1996). DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier. In Proc. Int. Conf. on the Physics of Semiconductors (pp. 2355-2358). Berlin, Germany.
Shi, J.M. ; Koenraad, P.M. ; Stadt, van de, A.F.W. ; Peeters, F.M. ; Devreese, J.T. ; Wolter, J.H. / DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier. Proc. Int. Conf. on the Physics of Semiconductors. Berlin, Germany, 1996. pp. 2355-2358
@inproceedings{fb90c6278ad0467ab90ab6dc59c0c40a,
title = "DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier",
author = "J.M. Shi and P.M. Koenraad and {Stadt, van de}, A.F.W. and F.M. Peeters and J.T. Devreese and J.H. Wolter",
year = "1996",
language = "English",
pages = "2355--2358",
booktitle = "Proc. Int. Conf. on the Physics of Semiconductors",

}

Shi, JM, Koenraad, PM, Stadt, van de, AFW, Peeters, FM, Devreese, JT & Wolter, JH 1996, DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier. in Proc. Int. Conf. on the Physics of Semiconductors. Berlin, Germany, pp. 2355-2358.

DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier. / Shi, J.M.; Koenraad, P.M.; Stadt, van de, A.F.W.; Peeters, F.M.; Devreese, J.T.; Wolter, J.H.

Proc. Int. Conf. on the Physics of Semiconductors. Berlin, Germany, 1996. p. 2355-2358.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier

AU - Shi, J.M.

AU - Koenraad, P.M.

AU - Stadt, van de, A.F.W.

AU - Peeters, F.M.

AU - Devreese, J.T.

AU - Wolter, J.H.

PY - 1996

Y1 - 1996

M3 - Conference contribution

SP - 2355

EP - 2358

BT - Proc. Int. Conf. on the Physics of Semiconductors

CY - Berlin, Germany

ER -

Shi JM, Koenraad PM, Stadt, van de AFW, Peeters FM, Devreese JT, Wolter JH. DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier. In Proc. Int. Conf. on the Physics of Semiconductors. Berlin, Germany. 1996. p. 2355-2358