DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier

J.M. Shi, P.M. Koenraad, A.F.W. Stadt, van de, F.M. Peeters, J.T. Devreese, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. Int. Conf. on the Physics of Semiconductors
Place of Publication	Berlin, Germany
Pages	2355-2358
Publication status	Published - 1996

Cite this

@inproceedings{fb90c6278ad0467ab90ab6dc59c0c40a,

title = "DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier",

author = "J.M. Shi and P.M. Koenraad and {Stadt, van de}, A.F.W. and F.M. Peeters and J.T. Devreese and J.H. Wolter",

year = "1996",

language = "English",

pages = "2355--2358",

booktitle = "Proc. Int. Conf. on the Physics of Semiconductors",

}

TY - GEN

T1 - DX-center and pressure effects on the electronic structure of a delta-doped qunatum barrier

AU - Shi, J.M.

AU - Koenraad, P.M.

AU - Stadt, van de, A.F.W.

AU - Peeters, F.M.

AU - Devreese, J.T.

AU - Wolter, J.H.

PY - 1996

Y1 - 1996

M3 - Conference contribution

SP - 2355

EP - 2358

BT - Proc. Int. Conf. on the Physics of Semiconductors

CY - Berlin, Germany

ER -