Abstract
This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.
| Original language | English |
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| Title of host publication | 2018 Asia-Pacific Microwave Conference, APMC 2018 |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 237-239 |
| Number of pages | 3 |
| ISBN (Electronic) | 978-4-9023-3945-1 |
| DOIs | |
| Publication status | Published - 16 Jan 2019 |
| Event | 2018 Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan Duration: 6 Nov 2018 → 9 Nov 2018 Conference number: 30 |
Conference
| Conference | 2018 Asia-Pacific Microwave Conference, APMC 2018 |
|---|---|
| Country/Territory | Japan |
| City | Kyoto |
| Period | 6/11/18 → 9/11/18 |
Keywords
- Broadband amplifier
- Electro-absorption modulator (EAM)
- Modulator driver
- PAM-4
- SiGe:C BiCMOS integrated circuit