Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

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Abstract

This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages237-239
Number of pages3
ISBN (Electronic)978-4-9023-3945-1
DOIs
Publication statusPublished - 16 Jan 2019
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 6 Nov 20189 Nov 2018

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period6/11/189/11/18

Fingerprint

Pulse amplitude modulation
Modulators
Packaging
Bandwidth
Electric power utilization
Electric potential

Keywords

  • Broadband amplifier
  • Electro-absorption modulator (EAM)
  • Modulator driver
  • PAM-4
  • SiGe:C BiCMOS integrated circuit

Cite this

Zhang, X., Liu, X., van Dommele, A. R., & Matters-Kammerer, M. K. (2019). Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. In 2018 Asia-Pacific Microwave Conference, APMC 2018 (pp. 237-239). [8617323] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/APMC.2018.8617323
Zhang, Xi ; Liu, Xiao ; van Dommele, A.R. ; Matters-Kammerer, Marion K. / Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. 2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2019. pp. 237-239
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abstract = "This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53{\%} while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.",
keywords = "Broadband amplifier, Electro-absorption modulator (EAM), Modulator driver, PAM-4, SiGe:C BiCMOS integrated circuit",
author = "Xi Zhang and Xiao Liu and {van Dommele}, A.R. and Matters-Kammerer, {Marion K.}",
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Zhang, X, Liu, X, van Dommele, AR & Matters-Kammerer, MK 2019, Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. in 2018 Asia-Pacific Microwave Conference, APMC 2018., 8617323, Institute of Electrical and Electronics Engineers, Piscataway, pp. 237-239, 30th Asia-Pacific Microwave Conference, APMC 2018, Kyoto, Japan, 6/11/18. https://doi.org/10.23919/APMC.2018.8617323

Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. / Zhang, Xi; Liu, Xiao; van Dommele, A.R.; Matters-Kammerer, Marion K.

2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2019. p. 237-239 8617323.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

AB - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

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Zhang X, Liu X, van Dommele AR, Matters-Kammerer MK. Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. In 2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway: Institute of Electrical and Electronics Engineers. 2019. p. 237-239. 8617323 https://doi.org/10.23919/APMC.2018.8617323