Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging

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Abstract

This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages237-239
Number of pages3
ISBN (Electronic)978-4-9023-3945-1
DOIs
Publication statusPublished - 16 Jan 2019
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 6 Nov 20189 Nov 2018

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period6/11/189/11/18

Keywords

  • Broadband amplifier
  • Electro-absorption modulator (EAM)
  • Modulator driver
  • PAM-4
  • SiGe:C BiCMOS integrated circuit

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