Abstract
This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.
| Original language | English |
|---|---|
| Title of host publication | 2018 Asia-Pacific Microwave Conference, APMC 2018 |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 237-239 |
| Number of pages | 3 |
| ISBN (Electronic) | 978-4-9023-3945-1 |
| DOIs | |
| Publication status | Published - 16 Jan 2019 |
| Event | 30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan Duration: 6 Nov 2018 → 9 Nov 2018 |
Conference
| Conference | 30th Asia-Pacific Microwave Conference, APMC 2018 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 6/11/18 → 9/11/18 |
Fingerprint
Keywords
- Broadband amplifier
- Electro-absorption modulator (EAM)
- Modulator driver
- PAM-4
- SiGe:C BiCMOS integrated circuit
Cite this
}
Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging. / Zhang, Xi; Liu, Xiao; van Dommele, A.R.; Matters-Kammerer, Marion K.
2018 Asia-Pacific Microwave Conference, APMC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2019. p. 237-239 8617323.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Dual-channel 56 Gb/s PAM-4 electro-absorption modulator driver for 3D wafer scale packaging
AU - Zhang, Xi
AU - Liu, Xiao
AU - van Dommele, A.R.
AU - Matters-Kammerer, Marion K.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.
AB - This paper presents the design and measurement of a 2 × 56 Gb/s PAM-4 dual-channel electro-absorption modulator (EAM) driver in a 0.25-μm SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM coupling method for 3D wafer scale packing is presented. The driver employs an optimized output interface with the EAM, which increases the output voltage swing by 53% while keep the same bandwidth and power consumption. The driver has 13.7 dB of gain with a 3 dB bandwidth of 31.5 GHz, which delivers 3 V ppd at 56 Gb/s PAM-4 and consumes 364.5 mW per channel, resulting in a figure of merit of 6.5 pJ/bit.
KW - Broadband amplifier
KW - Electro-absorption modulator (EAM)
KW - Modulator driver
KW - PAM-4
KW - SiGe:C BiCMOS integrated circuit
UR - http://www.scopus.com/inward/record.url?scp=85061767848&partnerID=8YFLogxK
U2 - 10.23919/APMC.2018.8617323
DO - 10.23919/APMC.2018.8617323
M3 - Conference contribution
AN - SCOPUS:85061767848
SP - 237
EP - 239
BT - 2018 Asia-Pacific Microwave Conference, APMC 2018
PB - Institute of Electrical and Electronics Engineers
CY - Piscataway
ER -