TY - JOUR
T1 - Dry etching of surface textured zinc oxide using a remote argon-hydrogen plasma
AU - Groenen, R.
AU - Creatore, M.
AU - Sanden, van de, M.C.M.
PY - 2005
Y1 - 2005
N2 - A new method for fast dry etching of inherently textured ZnO using a remote argon–hydrogen plasma created by a cascaded arc is presented, obtaining etch rates over 10 nm/s. Atomic hydrogen is considered to be the reactive species responsible for the etching process, the excess of molecular hydrogen in the gas phase does not contribute to the etching. Furthermore, using in situ spectroscopic ellipsometry (sub-) surface film modification competitive to etching is observed.
AB - A new method for fast dry etching of inherently textured ZnO using a remote argon–hydrogen plasma created by a cascaded arc is presented, obtaining etch rates over 10 nm/s. Atomic hydrogen is considered to be the reactive species responsible for the etching process, the excess of molecular hydrogen in the gas phase does not contribute to the etching. Furthermore, using in situ spectroscopic ellipsometry (sub-) surface film modification competitive to etching is observed.
U2 - 10.1016/j.apsusc.2004.07.034
DO - 10.1016/j.apsusc.2004.07.034
M3 - Article
SN - 0169-4332
VL - 241
SP - 321
EP - 325
JO - Applied Surface Science
JF - Applied Surface Science
IS - 3-4
ER -