Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel-effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystn., sheet resistance (Rs) and carrier mobility in cryst. or amorphized material, impact of the annealing ambient on Rs for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices.
|Title of host publication||Doping engineering for front-end processing : symposium held March 25 - 27, 2008, San Francisco, California, U.S.A.|
|Editors||B.J. Pawlak, M.L. Pelaz, M. Law|
|Place of Publication||Warrendale|
|Publisher||Materials Research Society|
|Publication status||Published - 2008|
|Name||Materials Research Society Symposium Proceedings|