Doping fin field-effect transistor sidewalls : impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

R. Duffy, G. Curatola, B.J. Pawlak, G. Doornbos, K. Tak, van der, P. Breimer, J.G.M. Berkum, van, F. Roozeboom

Research output: Contribution to journal › Article › Academic › peer-review

40 Citations (Scopus)
299 Downloads (Pure)

Fingerprint

Dive into the research topics of 'Doping fin field-effect transistor sidewalls : impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy