Doping fin field-effect transistor sidewalls : impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

R. Duffy, G. Curatola, B.J. Pawlak, G. Doornbos, K. Tak, van der, P. Breimer, J.G.M. Berkum, van, F. Roozeboom

Research output: Contribution to journal › Article › Academic › peer-review

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