Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

H. Wang; J. Yuan; T. Rieger; P.J. Veldhoven, van; P.A.M. Nouwens; T.J. Eijkemans; T. Vries, de; B. Smalbrugge; E.J. Geluk; R. Nötzel

doi:10.1063/1.3116146

Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

H. Wang
, J. Yuan
, T. Rieger
, P.J. Veldhoven, van
, P.A.M. Nouwens
, T.J. Eijkemans
, T. Vries, de
, B. Smalbrugge
, E.J. Geluk
, R. Nötzel

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 µm. © 2009 American Institute of Physics.

Original language	English
Article number	143103
Pages (from-to)	143103-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3116146
Publication status	Published - 2009

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Wang, H., Yuan, J., Rieger, T., Veldhoven, van, P. J., Nouwens, P. A. M., Eijkemans, T. J., Vries, de, T., Smalbrugge, B., Geluk, E. J., & Nötzel, R. (2009). Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy. Applied Physics Letters, 94(14), 143103-1/3. Article 143103. https://doi.org/10.1063/1.3116146

@article{4de8397e2c4b4062ad6dd0e69fb370c7,

title = "Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy",

abstract = "Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 µm. {\textcopyright} 2009 American Institute of Physics.",

author = "H. Wang and J. Yuan and T. Rieger and \{Veldhoven, van\}, P.J. and P.A.M. Nouwens and T.J. Eijkemans and \{Vries, de\}, T. and B. Smalbrugge and E.J. Geluk and R. N{\"o}tzel",

year = "2009",

doi = "10.1063/1.3116146",

language = "English",

volume = "94",

pages = "143103--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

Wang, H, Yuan, J, Rieger, T, Veldhoven, van, PJ, Nouwens, PAM, Eijkemans, TJ, Vries, de, T, Smalbrugge, B, Geluk, EJ & Nötzel, R 2009, 'Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy', Applied Physics Letters, vol. 94, no. 14, 143103, pp. 143103-1/3. https://doi.org/10.1063/1.3116146

TY - JOUR

T1 - Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

AU - Wang, H.

AU - Yuan, J.

AU - Rieger, T.

AU - Veldhoven, van, P.J.

AU - Nouwens, P.A.M.

AU - Eijkemans, T.J.

AU - Vries, de, T.

AU - Smalbrugge, B.

AU - Geluk, E.J.

AU - Nötzel, R.

PY - 2009

Y1 - 2009

N2 - Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 µm. © 2009 American Institute of Physics.

AB - Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 µm. © 2009 American Institute of Physics.

U2 - 10.1063/1.3116146

DO - 10.1063/1.3116146

M3 - Article

SN - 0003-6951

VL - 94

SP - 143103-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143103

ER -

Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

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