Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate

Q. Gong, R. Nötzel, J.H. Wolter, H.-P. Schönherr, K.H. Ploog

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13 Citations (Scopus)


We study the growth of (In,Ga)As on GaAs(311)A substrates by molecular-beam epitaxy (MBE). When the (In,Ga)As layer thickness exceeds a certain value, wire-like structures with widths of several 10 nm develop during growth, due to the strain-driven growth instability. The properties of the nonplanar surface are modulated by the wire formation, resulting, upon further (In,Ga)As growth, in islands nucleation exactly on top of the wires. A surface layer of floating In built up by segregation is assumed to be the driving force for the island formation. The MBE growth of (In,Ga)As on GaAs(311)A, thus, reveals two distinct growth behaviours which might be generic in the deposition of thin low-misfit films
Original languageEnglish
Pages (from-to)104-108
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2002


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