Abstract
We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.
Original language | English |
---|---|
Pages (from-to) | 2462-2464 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 36 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2011 |