Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

M.S. Tahvili; Y. Barbarin; X.J.M. Leijtens; T. Vries, de; E. Smalbrugge; J. Bolk; H.P.M.M. Ambrosius; M.K. Smit; E.A.J.M. Bente

doi:10.1364/OL.36.002462

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

M.S. Tahvili, Y. Barbarin, X.J.M. Leijtens, T. Vries, de, E. Smalbrugge, J. Bolk, H.P.M.M. Ambrosius, M.K. Smit, E.A.J.M. Bente

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

Original language	English
Pages (from-to)	2462-2464
Number of pages	3
Journal	Optics Letters
Volume	36
Issue number	13
DOIs	https://doi.org/10.1364/OL.36.002462
Publication status	Published - 2011

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10.1364/OL.36.002462

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title = "Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers",

abstract = "We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.",

author = "M.S. Tahvili and Y. Barbarin and X.J.M. Leijtens and {Vries, de}, T. and E. Smalbrugge and J. Bolk and H.P.M.M. Ambrosius and M.K. Smit and E.A.J.M. Bente",

year = "2011",

doi = "10.1364/OL.36.002462",

language = "English",

volume = "36",

pages = "2462--2464",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optical Society of America (OSA)",

number = "13",

}

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers. / Tahvili, M.S.; Barbarin, Y.; Leijtens, X.J.M.; Vries, de, T.; Smalbrugge, E.; Bolk, J.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.

In: Optics Letters, Vol. 36, No. 13, 2011, p. 2462-2464.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

AU - Tahvili, M.S.

AU - Barbarin, Y.

AU - Leijtens, X.J.M.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Bolk, J.

AU - Ambrosius, H.P.M.M.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

PY - 2011

Y1 - 2011

N2 - We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

AB - We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

U2 - 10.1364/OL.36.002462

DO - 10.1364/OL.36.002462

M3 - Article

C2 - 21725445

VL - 36

SP - 2462

EP - 2464

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 13

ER -

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

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