Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers

M.S. Tahvili, Y. Barbarin, X.J.M. Leijtens, T. Vries, de, E. Smalbrugge, J. Bolk, H.P.M.M. Ambrosius, M.K. Smit, E.A.J.M. Bente

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)
3 Downloads (Pure)

Abstract

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20¿GHz repetition rate and around 1575¿nm wavelength. The device has been realized using the active–passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.
Original languageEnglish
Pages (from-to)2462-2464
Number of pages3
JournalOptics Letters
Volume36
Issue number13
DOIs
Publication statusPublished - 2011

Fingerprint Dive into the research topics of 'Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers'. Together they form a unique fingerprint.

Cite this