Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

Victor T. van Lange; Wouter H.J. Peeters; Marcel A. Verheijen; Max C. Van Hemert; Erik P.A.M. Bakkers; Jos E.M. Haverkort

doi:10.1109/SiPhotonics60897.2024.10543877

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

Victor T. van Lange, Wouter H.J. Peeters, Marcel A. Verheijen, Max C. Van Hemert, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

Original language	English
Title of host publication	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	979-8-3503-9404-7
DOIs	https://doi.org/10.1109/SiPhotonics60897.2024.10543877
Publication status	Published - 10 Jun 2024
Event	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 - Tokyo, Japan Duration: 15 Apr 2024 → 18 Apr 2024

Conference

Conference	2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Country/Territory	Japan
City	Tokyo
Period	15/04/24 → 18/04/24

Keywords

hexagonal silicon-germanium
quantum confinement
quantum well
Silicon photonics

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10.1109/SiPhotonics60897.2024.10543877

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van Lange, V. T., Peeters, W. H. J., Verheijen, M. A., Van Hemert, M. C., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2024). Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. In 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 Article 10543877 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SiPhotonics60897.2024.10543877

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title = "Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells",

abstract = "We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.",

keywords = "hexagonal silicon-germanium, quantum confinement, quantum well, Silicon photonics",

author = "{van Lange}, {Victor T.} and Peeters, {Wouter H.J.} and Verheijen, {Marcel A.} and {Van Hemert}, {Max C.} and Bakkers, {Erik P.A.M.} and Haverkort, {Jos E.M.}",

year = "2024",

month = jun,

day = "10",

doi = "10.1109/SiPhotonics60897.2024.10543877",

language = "English",

booktitle = "2024 IEEE Silicon Photonics Conference, SiPhotonics 2024",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 ; Conference date: 15-04-2024 Through 18-04-2024",

}

van Lange, VT , Peeters, WHJ , Verheijen, MA , Van Hemert, MC , Bakkers, EPAM & Haverkort, JEM 2024, Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. in 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024., 10543877, Institute of Electrical and Electronics Engineers, 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024, Tokyo, Japan, 15/04/24. https://doi.org/10.1109/SiPhotonics60897.2024.10543877

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells. / van Lange, Victor T.; Peeters, Wouter H.J.; Verheijen, Marcel A. et al.
2024 IEEE Silicon Photonics Conference, SiPhotonics 2024. Institute of Electrical and Electronics Engineers, 2024. 10543877.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Van Hemert, Max C.

AU - Bakkers, Erik P.A.M.

AU - Haverkort, Jos E.M.

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N2 - We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

AB - We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.

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PB - Institute of Electrical and Electronics Engineers

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Y2 - 15 April 2024 through 18 April 2024

ER -

Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

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