Direct band bap wurtzite semiconductor nanowires

S. Assali (Inventor), I. Zardo (Inventor), J.E.M. Haverkort (Inventor), E.P.A.M. Bakkers (Inventor)

Research output: PatentPatent publication

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Abstract

Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
Original languageEnglish
Patent numberUS2014230720
Publication statusPublished - 21 Aug 2014

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