Direct band bap wurtzite semiconductor nanowires

S. Assali; I. Zardo; J.E.M. Haverkort; E.P.A.M. Bakkers

Direct band bap wurtzite semiconductor nanowires

S. Assali (Inventor), I. Zardo (Inventor), J.E.M. Haverkort (Inventor), E.P.A.M. Bakkers (Inventor)

Photonics and Semiconductor Nanophysics

Research output: Patent › Patent publication

35 Downloads (Pure)

Abstract

Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

Original language	English
Patent number	US2014230720
Publication status	Published - 21 Aug 2014

Access to Document

693191739607446Final published version, 1.53 MB

Cite this

@misc{9bfdb011268c4fcb89ddbfec891d2302,

title = "Direct band bap wurtzite semiconductor nanowires",

abstract = "Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.",

author = "S. Assali and I. Zardo and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2014",

month = aug,

day = "21",

language = "English",

type = "Patent",

note = "US2014230720",

}

TY - PAT

T1 - Direct band bap wurtzite semiconductor nanowires

AU - Assali, S.

AU - Zardo, I.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2014/8/21

Y1 - 2014/8/21

N2 - Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

AB - Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

UR - http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=1&ND=3&adjacent=true&locale=nl_NL&FT=D&date=20140821&CC=US&NR=2014230720A1&KC=A1

M3 - Patent publication

M1 - US2014230720

ER -

Direct band bap wurtzite semiconductor nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this