Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I.M.P. Aarts; B. Hoex; A.H.M. Smets; R.A.H. Engeln; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1063/1.1713047

Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

I.M.P. Aarts, B. Hoex, A.H.M. Smets, R.A.H. Engeln, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

Original language	English
Pages (from-to)	3079-3081
Journal	Applied Physics Letters
Volume	84
Issue number	16
DOIs	https://doi.org/10.1063/1.1713047
Publication status	Published - 2004

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title = "Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy",

abstract = "Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.",

author = "I.M.P. Aarts and B. Hoex and A.H.M. Smets and R.A.H. Engeln and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2004",

doi = "10.1063/1.1713047",

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journal = "Applied Physics Letters",

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T1 - Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

AU - Aarts, I.M.P.

AU - Hoex, B.

AU - Smets, A.H.M.

AU - Engeln, R.A.H.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2004

Y1 - 2004

N2 - Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

AB - Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H.

U2 - 10.1063/1.1713047

DO - 10.1063/1.1713047

M3 - Article

SN - 0003-6951

VL - 84

SP - 3079

EP - 3081

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

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