Diode r.f. sputtering of copper and copper oxide thin films and multilayers

P. Boher; P. Houdy; C. Schiller; L.J. IJzendoorn, van

doi:10.1016/0040-6090(89)90875-4

Diode r.f. sputtering of copper and copper oxide thin films and multilayers

P. Boher, P. Houdy, C. Schiller, L.J. IJzendoorn, van

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Abstract

Diode r.f. sputtering in oxygen-argon mixtures has been used to produce thin copper oxide films with a controlled amount of oxygen. The stoichiometry of the films was monitored in situ during the deposition by kinetic ellipsometry and was characterized ex situ by grazing X-ray reflection and Rutherford backscattering. Phases from copper to CuO were obtained with a good reproducibility by varying only the partial pressure of oxygen in the plasma. The reactivity of the films with silicon and float glass substrates was evaluated. Cu/CuO multilayers exhibited well-defined Bragg peaks at 1.54 Å. Kinetic ellipsometry trajectories and grazing X-ray reflectivities have been interpreted assuming sharp Cu---CuO interfaces and diffused CuO---Cu interfaces.

Original language	English
Pages (from-to)	91-98
Number of pages	8
Journal	Thin Solid Films
Volume	174
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(89)90875-4
Publication status	Published - 1989

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title = "Diode r.f. sputtering of copper and copper oxide thin films and multilayers",

abstract = "Diode r.f. sputtering in oxygen-argon mixtures has been used to produce thin copper oxide films with a controlled amount of oxygen. The stoichiometry of the films was monitored in situ during the deposition by kinetic ellipsometry and was characterized ex situ by grazing X-ray reflection and Rutherford backscattering. Phases from copper to CuO were obtained with a good reproducibility by varying only the partial pressure of oxygen in the plasma. The reactivity of the films with silicon and float glass substrates was evaluated. Cu/CuO multilayers exhibited well-defined Bragg peaks at 1.54 {\AA}. Kinetic ellipsometry trajectories and grazing X-ray reflectivities have been interpreted assuming sharp Cu---CuO interfaces and diffused CuO---Cu interfaces.",

author = "P. Boher and P. Houdy and C. Schiller and {IJzendoorn, van}, L.J.",

year = "1989",

doi = "10.1016/0040-6090(89)90875-4",

language = "English",

volume = "174",

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journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Diode r.f. sputtering of copper and copper oxide thin films and multilayers

AU - Boher, P.

AU - Houdy, P.

AU - Schiller, C.

AU - IJzendoorn, van, L.J.

PY - 1989

Y1 - 1989

N2 - Diode r.f. sputtering in oxygen-argon mixtures has been used to produce thin copper oxide films with a controlled amount of oxygen. The stoichiometry of the films was monitored in situ during the deposition by kinetic ellipsometry and was characterized ex situ by grazing X-ray reflection and Rutherford backscattering. Phases from copper to CuO were obtained with a good reproducibility by varying only the partial pressure of oxygen in the plasma. The reactivity of the films with silicon and float glass substrates was evaluated. Cu/CuO multilayers exhibited well-defined Bragg peaks at 1.54 Å. Kinetic ellipsometry trajectories and grazing X-ray reflectivities have been interpreted assuming sharp Cu---CuO interfaces and diffused CuO---Cu interfaces.

AB - Diode r.f. sputtering in oxygen-argon mixtures has been used to produce thin copper oxide films with a controlled amount of oxygen. The stoichiometry of the films was monitored in situ during the deposition by kinetic ellipsometry and was characterized ex situ by grazing X-ray reflection and Rutherford backscattering. Phases from copper to CuO were obtained with a good reproducibility by varying only the partial pressure of oxygen in the plasma. The reactivity of the films with silicon and float glass substrates was evaluated. Cu/CuO multilayers exhibited well-defined Bragg peaks at 1.54 Å. Kinetic ellipsometry trajectories and grazing X-ray reflectivities have been interpreted assuming sharp Cu---CuO interfaces and diffused CuO---Cu interfaces.

U2 - 10.1016/0040-6090(89)90875-4

DO - 10.1016/0040-6090(89)90875-4

M3 - Article

SN - 0040-6090

VL - 174

SP - 91

EP - 98

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Diode r.f. sputtering of copper and copper oxide thin films and multilayers

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