Dilution-induced current-density increase in disordered organic semiconductor devices: A kinetic Monte Carlo study

Feiling Yang; Harm van Eersel; Jiawei Wang; Quan Niu; Peter A. Bobbert; Reinder Coehoorn; Feilong Liu; Guofu Zhou

doi:10.1103/PhysRevApplied.21.014050

Dilution-induced current-density increase in disordered organic semiconductor devices: A kinetic Monte Carlo study

Feiling Yang, Harm van Eersel, Jiawei Wang, Quan Niu (Corresponding author), Peter A. Bobbert, Reinder Coehoorn, Feilong Liu, Guofu Zhou

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Abstract

Using three-dimensional kinetic Monte Carlo simulations, we systematically investigate the effect of dilution with an inert material on the current density in unipolar sandwich-type disordered organic semiconductor devices. Such a dilution technique was studied experimentally by Abbaszadeh et al. [Nat. Mater. 15, 628 (2016)], who observed a dilution-induced increase of the current density. The authors explained the effect as a result of a reduced density of trapped charges ("trap dilution"), assuming an exponential density of trap states. Our simulations support this explanation, and show under which conditions this trap-dilution-induced increase of the current density becomes more than outweighed by the negative effect of the dilution-induced decrease of the mobility. The effect is studied for sets of systematically varied material parameters, including systems with a Gaussian shape of the host and trap DOS.

Original language	English
Article number	014050
Number of pages	15
Journal	Physical Review Applied
Volume	21
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevApplied.21.014050
Publication status	Published - 25 Jan 2024

Bibliographical note

Publisher Copyright:
© 2024 American Physical Society.

Funding

This work was supported by the National Key R&D Program of China (Grant No. 2023YFB36113001), the talents project of Guangdong Province, National Natural Science Foundation of China (Grant No. 62005083), Science and Technology Program of Guangzhou (Grant No. 2019050001), the leading talents of Guangdong Province Program (Grant No. 00201504), Program for Chang Jiang Scholars and Innovative Research Teams in Universities (Grant No. IRT 17R40), Guangdong Provincial Key Laboratory of Optical Information Materials and Technology (Grant No. 2023B1212060065). National Center for International Research on Green Optoelectronics, MOE International Laboratory for Optical Information Technologies and the 111 Project.

Funders	Funder number
South China Normal University	2023B1212060065
National Natural Science Foundation of China	62005083
National Key Research and Development Program of China	2023YFB36113001

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AU - Yang, Feiling

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AU - Bobbert, Peter A.

AU - Coehoorn, Reinder

AU - Liu, Feilong

AU - Zhou, Guofu

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Dilution-induced current-density increase in disordered organic semiconductor devices: A kinetic Monte Carlo study

Abstract

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