Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlOx gate

Lior Shani, Pim Lueb, Gavin Menning, Mohit Gupta, Colin Riggert, Tyler Littmann, Frey Hackbarth, Marco Rossi, Jason Jung, Ghada Badawy, Marcel A. Verheijen, Paul A. Crowell, Erik P.A.M. Bakkers, Vlad S. Pribiag (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
23 Downloads (Pure)

Abstract

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Original languageEnglish
Article number015101
Number of pages8
JournalMaterials for Quantum Technology
Volume4
Issue number1
DOIs
Publication statusPublished - 1 Mar 2024

Funding

FundersFunder number
Province of Noord-Brabant024.005.006
National Science FoundationECCS-2025124
U.S. Department of EnergyDE-SC0019274
Harvard UniversityDMR-2011401
H2020 European Research Council
Research Centre Julich (FZJ)
Ministerie van Onderwijs, Cultuur en Wetenschap

    Keywords

    • few-layers-graphene
    • InSb
    • nanowire
    • quantum transport

    Fingerprint

    Dive into the research topics of 'Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlOx gate'. Together they form a unique fingerprint.

    Cite this