@article{63dc74b7eac0464f8c0d2560668c58dd,
title = "Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlOx gate",
abstract = "Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P{\'e}rot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.",
keywords = "few-layers-graphene, InSb, nanowire, quantum transport",
author = "Lior Shani and Pim Lueb and Gavin Menning and Mohit Gupta and Colin Riggert and Tyler Littmann and Frey Hackbarth and Marco Rossi and Jason Jung and Ghada Badawy and Verheijen, {Marcel A.} and Crowell, {Paul A.} and Bakkers, {Erik P.A.M.} and Pribiag, {Vlad S.}",
year = "2024",
month = mar,
day = "1",
doi = "10.1088/2633-4356/ad2d6b",
language = "English",
volume = "4",
journal = "Materials for Quantum Technology",
issn = "2633-4356",
publisher = "IOP Publishing Ltd.",
number = "1",
}