Diffusion suppression in silicon by substitutional C doping

N. E.B. Cowern; B. Colombeau; F. Roozeboom; M. Hopstaken; H. Snijders; P. Meunier-Beillard; W. Lerch

doi:10.1109/ESSDERC.2002.194905

Diffusion suppression in silicon by substitutional C doping

N. E.B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier-Beillard, W. Lerch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Pages	203-206
Number of pages	4
ISBN (Print)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.194905
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	32nd European Solid-State Device Research Conference (ESSDERC 2002) - Firenze, Italy Duration: 24 Sept 2002 → 26 Sept 2002 Conference number: 32

Conference

Conference	32nd European Solid-State Device Research Conference (ESSDERC 2002)
Abbreviated title	ESSDERC 2002
Country/Territory	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Access to Document

10.1109/ESSDERC.2002.194905

Cite this

@inproceedings{98f6c340bbcf4a8ea8ac41ecc38bccec,

title = "Diffusion suppression in silicon by substitutional C doping",

abstract = "The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.",

author = "Cowern, {N. E.B.} and B. Colombeau and F. Roozeboom and M. Hopstaken and H. Snijders and P. Meunier-Beillard and W. Lerch",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2002.194905",

language = "English",

isbn = "8890084782",

pages = "203--206",

booktitle = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "32nd European Solid-State Device Research Conference (ESSDERC 2002), ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

}

Cowern, NEB, Colombeau, B, Roozeboom, F, Hopstaken, M, Snijders, H, Meunier-Beillard, P & Lerch, W 2002, Diffusion suppression in silicon by substitutional C doping. in European Solid-State Device Research Conference. IEEE Computer Society, Piscataway, pp. 203-206, 32nd European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194905

TY - GEN

T1 - Diffusion suppression in silicon by substitutional C doping

AU - Cowern, N. E.B.

AU - Colombeau, B.

AU - Roozeboom, F.

AU - Hopstaken, M.

AU - Snijders, H.

AU - Meunier-Beillard, P.

AU - Lerch, W.

N1 - Conference code: 32

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

AB - The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

UR - http://www.scopus.com/inward/record.url?scp=84907694492&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2002.194905

DO - 10.1109/ESSDERC.2002.194905

M3 - Conference contribution

AN - SCOPUS:84907694492

SN - 8890084782

SP - 203

EP - 206

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

CY - Piscataway

T2 - 32nd European Solid-State Device Research Conference (ESSDERC 2002)

Y2 - 24 September 2002 through 26 September 2002

ER -

Diffusion suppression in silicon by substitutional C doping

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this