Diffusion suppression in silicon by substitutional C doping

N. E.B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier-Beillard, W. Lerch

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

The role of C as a suppressor of B, P, and In diffusion is widely known but the mechanisms involved are still poorly understood. This paper presents novel results on the diffusion of C at the nanometer scale, which clearly show that the suppression of diffusion arises from the expulsion of interstitials from the Cdoped region, caused by long-range migration of interstitial C atoms. Fundamental parameters for C diffusion (migration frequency and jump length) are presented and compared with existing data for B diffusion, and the results are placed in the context of a unified model of impurity diffusion.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
Place of PublicationPiscataway
PublisherIEEE Computer Society
Pages203-206
Number of pages4
ISBN (Print)8890084782
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event32nd European Solid-State Device Research Conference (ESSDERC 2002) - Firenze, Italy
Duration: 24 Sep 200226 Sep 2002
Conference number: 32

Conference

Conference32nd European Solid-State Device Research Conference (ESSDERC 2002)
Abbreviated titleESSDERC 2002
CountryItaly
CityFirenze
Period24/09/0226/09/02

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  • Cite this

    Cowern, N. E. B., Colombeau, B., Roozeboom, F., Hopstaken, M., Snijders, H., Meunier-Beillard, P., & Lerch, W. (2002). Diffusion suppression in silicon by substitutional C doping. In European Solid-State Device Research Conference (pp. 203-206). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194905