An analysis procedure was developed that enables studying diffusion in ultrathin films by utilizing the depth-resolved information that is contained in the background of low energy ion scattering (LEIS) spectra. Using a high-sensitivity analyzer/detector combination allows for such a low ion dose that the ion-induced perturbation caused by this technique is negligible and not measurable with LEIS. The developed analysis procedure provides a unique opportunity to study diffusion processes in nanoscaled systems. It was applied to the Mo/Si system, a system that is relevant for extreme ultraviolet optics.
Bibliographical noteFunding Information:
This work is part of the FOM Industrial Partnership Programme I10 (‘XMO’), which is carried out under contract with Carl Zeiss SMT AG, Oberkochen and the “Stichting voor Fundamenteel Onderzoek der Materie (FOM),” the latter being financially supported by the “Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO).”
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